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Full-Text Articles in Nanoscience and Nanotechnology
Partitioning Of Defect Sources And Defects Reduction In Euv Mask Blank Multilayer Deposition, Alin O. Antohe
Partitioning Of Defect Sources And Defects Reduction In Euv Mask Blank Multilayer Deposition, Alin O. Antohe
Legacy Theses & Dissertations (2009 - 2024)
Extreme ultraviolet lithography (EUVL) is the next-generation lithography technology and is slated to replace 193-nanometer argon fluoride (ArF) lithography. EUVL uses 13.5-nanometer wavelength light to expose the photoresist. In doing so it enables the technological achievement of 20-nanometer half-pitch circuits which cannot be achieved with conventional 193-nanometer optical lithography.
Secondary Electron Interactions In Exposures Of Euv Photoresists, Steven Grzeskowiak
Secondary Electron Interactions In Exposures Of Euv Photoresists, Steven Grzeskowiak
Legacy Theses & Dissertations (2009 - 2024)
The microelectronic industry’s movement toward smaller feature sizes has necessitated a shift to extreme ultraviolet (EUV) lithography to enable cost-effective patterning of sub 20-nm features. However, this shift from 193-nm lithography (6.4 eV) to EUV (13.5 nm, 92 eV) poses significant obstacles, such that photolithography is now operating in an energy range above the electron binding energies of common atomic species in photoresists. This significant energy increase means the chemical reactions happening within operate in the realm of radiation chemistry instead of photochemistry since the observed reactions are due almost entirely to the action of photoelectrons as they dissipate their …
Mechanistic Investigation Of Antimony Carboxylate Photoresists For Euv Lithography, Michael Murphy
Mechanistic Investigation Of Antimony Carboxylate Photoresists For Euv Lithography, Michael Murphy
Legacy Theses & Dissertations (2009 - 2024)
In 2019, Extreme Ultraviolet (EUV) lithography begins its integration into high volume manufacturing to replace 193-nm lithography at key steps in the fabrication of integrated circuits. To achieve the requirements of the 7- and 5-nm nodes, a new photoresist technology is required to replace traditional chemically-amplified photoresists (CAR). One novel technology incorporates metal atoms with high EUV absorptivity into the photoresist. In this work, we describe the development, evaluation and mechanistic investigation of triorganoantimony(V) dicarboxylate complexes as novel photoresists for EUV lithography.
Organometallic Carboxylate Resists For Euv With High Sensitivity, James Passarelli
Organometallic Carboxylate Resists For Euv With High Sensitivity, James Passarelli
Nanoscale Science & Engineering (discontinued with class year 2014)
We have developed organometallic carboxylate compounds [RnM(O2CR’)2] capable of acting as negative-tone EUV resists. Overall, the best and fastest resists contain antimony, are pentavalent and the carboxylate group contains a polymerizable olefin (e.g. acrylate, methacrylate or styrenecarboxylate). Evidence suggests that high sensitivity is achieved through the polymerization of olefins in the exposed region. We have performed a systematic sensitivity study of molecules of the type RnM(O2CR’)2 where we have studied seven R groups, four main group metals (M), and three polymerizable carboxylate groups (O2CR’). We found that the greatest predictor of sensitivity of the RnSb(O2CR’)2 resists is their level of …
Nanoparticle Generation And Interactions With Surfaces In Vacuum Systems, Yashdeep Khopkar
Nanoparticle Generation And Interactions With Surfaces In Vacuum Systems, Yashdeep Khopkar
Legacy Theses & Dissertations (2009 - 2024)
Extreme ultraviolet lithography (EUVL) is the most likely candidate as the next generation technology beyond immersion lithography to be used in high volume manufacturing in the semiconductor industry. One of the most problematic areas in the development process is the fabrication of mask blanks used in EUVL. As the masks are reflective, there is a chance that any surface aberrations in the form of bumps or pits could be printed on the silicon wafers. There is a strict tolerance to the number density of such defects on the mask that can be used in the final printing process. Bumps on …
Characterization Of Extreme Ultraviolet Lithography Photoresists Using Advanced Metrology And Fitting Techniques, Genevieve Kane
Characterization Of Extreme Ultraviolet Lithography Photoresists Using Advanced Metrology And Fitting Techniques, Genevieve Kane
Legacy Theses & Dissertations (2009 - 2024)
As extreme ultraviolet lithography (EUVL) prepares to be incorporated into high volume manufacturing, many challenges must be addressed. Among these challenges, a need for photoresist improvement exists. The work described here will look into some of the problems and challenges facing EUV resists, in particular out-of-band (OOB) wavelengths of light and their interaction with photoresists. Studies have been completed on the effect of out-of-band light on photoresists [1]-[3]. It is imperative that solutions to suppress the deep ultraviolet (DUV) OOB light be incorporated into next generation EUV production tools due to concerns of decreased performance of lithography, and an increase …
Novel Resist Systems For Euv Lithography : Ler, Chain-Scission, Nanoparticle And More, Brian Cardineau
Novel Resist Systems For Euv Lithography : Ler, Chain-Scission, Nanoparticle And More, Brian Cardineau
Legacy Theses & Dissertations (2009 - 2024)
Extreme Ultraviolet (EUV) lithography is currently the best option for replacing 193-nm lithography in future IC fabrication. For EUV to be successful, however, there are a number of challenges that must be overcome. Current resist designs struggle to meet the demands of future lithography nodes. We propose the best way to overcome these obstacles is through the design of novel resist systems.
Local Area Mask Patterning Of Extreme Ultraviolet Lithography Reticles For Native Defect Analysis, Adam Lyons
Local Area Mask Patterning Of Extreme Ultraviolet Lithography Reticles For Native Defect Analysis, Adam Lyons
Legacy Theses & Dissertations (2009 - 2024)
Understanding the nature and behavior of native defects on EUV reticles, particularly their printability, is of critical importance to the successful implementation of EUV lithography for high volume manufacturing, as will be demonstrated in the upcoming chapters. Previous defect characterization work has focused on the examination of programmed defects, native defects on blank reticles, and unaligned native defects on patterned reticles. Each of these approaches has drawbacks, which will be discussed in detail, and the aim of this research is to address these deficiencies by developing a method to pattern features of interest over native defects, enabling the direct observation …
Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan
Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan
Legacy Theses & Dissertations (2009 - 2024)
This dissertation investigates one of the remaining issues for extreme ultraviolet (EUV) lithography, the effects of radiation induced carbon contamination on the printing performance of patterned EUV masks. The impact of carbon contamination on EUV masks is significant due to the throughput loss and potential effects on imaging performance, and occurs when multilayer surfaces are exposed to EUV radiation with residual carbonaceous species present. Current carbon contamination research is primarily focused on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on …
Fluorinated Acid Amplifiers For Extreme Ultraviolet Lithography, Seth Aaron Kruger
Fluorinated Acid Amplifiers For Extreme Ultraviolet Lithography, Seth Aaron Kruger
Legacy Theses & Dissertations (2009 - 2024)
Extreme ultraviolet lithography (EUV) is a promising candidate for next generation lithography. Although EUV has great potential there are still many challenges that must be solved before the technology can be implemented in the high volume manufacturing of semiconductor devices. The lithographic performance of EUV photoresists is one aspect that requires improvement. Particularly, EUV resists need simultaneous improvements in three properties: resolution, line-edge-roughness and sensitivity. The incorporation of acid amplifiers (AAs) in resists is one method to improve all three properties.
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry continues scaling devices to smaller sizes, the need for next generation lithography technology for fabricating these small structures has always been at the forefront. Over the past few years, conventional optical lithography technology which has adopted a series of resolution enhancement techniques to support the scaling needs is expected to run out of steam in the near future. Extreme Ultra Violet lithography (EUVL) is being actively pursued by the semiconductor industry as one of the most promising next generation lithographic technologies. Most of the issues unique to EUVL arise from the use of 13.5 nm light …