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A Study Of Dislocation Networks In Gasb On Gaas Using Transmission Electron Microscopy, Darryl M. Shima
Nanoscience and Microsystems ETDs
The growth of GaSb on GaAs is of interest for a variety of scientific and technological applications. Some evidence suggests that low threading dislocation density GaSb can be grown directly on GaAs through arrays of periodic edge misfit dislocations. However, significant conflicting data also exist. This work seeks to clarify the question through transmission electron microscopy analysis of GaSb grown on GaAs. The results of this work show that the single strategy of direct growth of GaSb on GaAs results in dislocation densities too high for devices. A secondary strategy of dislocation filtering layers is introduced to further reduce threading ...