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Full-Text Articles in Nanoscience and Nanotechnology
Probing Local Vacancy-Driven Resistive Switching In Metal Oxide Nanostructures, Jiaying Wang
Probing Local Vacancy-Driven Resistive Switching In Metal Oxide Nanostructures, Jiaying Wang
Doctoral Dissertations
Novel nonvolatile memory technologies garner intense research interest as conventional ash devices approach their physical limit. Memristors, often comprising an insulating thin film between two metal electrodes to constitute a class of two-terminal devices, enable a variety of important large data storage and data-driven computing applications. In addition to nonvolatile behavior, other features such as high scalability, low power consumption, and sub-nanosecond response times make memristors among the most attractive candidate systems. Their strength in electronic storage relies on the unique properties of the tunable variations in resistance induced from the accumulation of charged defects based on the applied bias …
High Performance Silver Diffusive Memristors For Future Computing, Rivu Midya
High Performance Silver Diffusive Memristors For Future Computing, Rivu Midya
Masters Theses
Sneak path current is a significant remaining obstacle to the utilization of large crossbar arrays for non-volatile memories and other applications of memristors. A two-terminal selector device with an extremely large current-voltage nonlinearity and low leakage current could solve this problem. We present here a Ag/oxide-based threshold switching (TS) device with attractive features such as high current-voltage nonlinearity (~1010), steep turn-on slope (less than 1 mV/dec), low OFF-state leakage current (~10-14 A), fast turn ON/OFF speeds (<75/250 ns), and good endurance (>108 cycles). The feasibility of using this selector with a typical memristor has been demonstrated by physically integrating them …