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Full-Text Articles in Nanoscience and Nanotechnology
Phonon Transport At Boundaries And Interfaces In Two-Dimensional Materials, Cameron Foss
Phonon Transport At Boundaries And Interfaces In Two-Dimensional Materials, Cameron Foss
Masters Theses
A typical electronic or photonic device may consist of several materials each one potentially meeting at an interface or terminating with a free-surface boundary. As modern device dimensions reach deeper into the nanoscale regime, interfaces and boundaries become increasingly influential to both electrical and thermal energy transport. While a large majority of the device community focuses on the former, we focus here on the latter issue of thermal transport which is of great importance in implementing nanoscale devices as well as developing solutions for on-chip heat removal and waste heat scavenging. In this document we will discuss how modern performance …
High Performance Silver Diffusive Memristors For Future Computing, Rivu Midya
High Performance Silver Diffusive Memristors For Future Computing, Rivu Midya
Masters Theses
Sneak path current is a significant remaining obstacle to the utilization of large crossbar arrays for non-volatile memories and other applications of memristors. A two-terminal selector device with an extremely large current-voltage nonlinearity and low leakage current could solve this problem. We present here a Ag/oxide-based threshold switching (TS) device with attractive features such as high current-voltage nonlinearity (~1010), steep turn-on slope (less than 1 mV/dec), low OFF-state leakage current (~10-14 A), fast turn ON/OFF speeds (<75/250 ns), and good endurance (>108 cycles). The feasibility of using this selector with a typical memristor has been demonstrated by physically integrating them …
Incorporation Of High-K Hfo2 Thin Films In A-Igzo Thin Film Transistor Devices, Aaron Hamilton Bales
Incorporation Of High-K Hfo2 Thin Films In A-Igzo Thin Film Transistor Devices, Aaron Hamilton Bales
Masters Theses
In this study, HfO2 [hafnium oxide] thin films are investigated extensively as part of indium gallium zinc oxide (IGZO) thin film transistor (TFT) devices. They are incorporated into the TFTs, both as a gate insulator and a passivation layer. First, the HfO2 [hafnium oxide] films themselves are investigated through an annealing study and through I-V and C-V measurements. Then, HfO2 [hafnium oxide] is suggested as a replacement for commonly used SiO2 [silicon dioxide] gate insulator, as it has a dielectric constant that is 4 – 6 times higher. This higher dielectric constant allows for comparable TFT performance at a lower …