Nanoscience and Nanotechnology Commons^™

Improved Contacts And Device Performance In Mos2 Transistors Using 2d Semiconductor Interlayers, Kraig Andrews

Wayne State University Dissertations

The rapid growth of modern electronics industry over the past half-century has been sustained by the continued miniaturization of silicon-based electronics. However, as fundamental limits approach, there is a need to search for viable alternative materials for next-generation electronics in the post-silicon era. Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs) have attracted much attention due to their atomic thickness, absence of dangling bonds and moderately high carrier mobility. However, achieving low-resistance contacts has been major impediment in developing high-performance field-effect transistors (FETs) based on 2D semiconductors. A substantial Schottky barrier (SB) is often present at the metal/2D-semicondcutor interface, …

Substrate Effects And Dielectric Integration In 2d Electronics, Bhim Prasad Chamlagain

Wayne State University Dissertations

The ultra-thin body of monolayer (and few-layer) two dimensional (2D) semiconducting materials such as transitional metal dichalconiges (TMDs), black phosphorous (BP) has demonstrated tremendous beneficial physical, transport, and optical properties for a wide range of applications. Because of their ultrathin bodies, the properties of 2D materials are highly sensitive to environmental effects. Particularly, the performance of 2D semiconductor electronic devices is strongly dependent on the substrate/dielectric properties, extrinsic impurities and absorbates. In this work, we systematically studied the transport properties of mechanically exfoliated few layer TMD field-effect transistors (FETs) consistently fabricated on various substrates including SiO2,Parylene –C, Al2O3, SiO2 modified …

Optimization Of Transition-Metal Dichalcogenides Based Field- Effect- Transistors Via Contact Engineering, Meeghage Madusanka Perera

Wayne State University Dissertations

ABSTRACT

Optimization of Transition-Metal Dichalcogenides based Field- Effect-Transistors via contact engineering

by

Meeghage M Perera

September , 2016

Advisor : Dr. Zhixian Zhou

Major: Physics (Condensed mater physics/nano-electronics)

Degree: Doctor of Philosophy

Layered transition Metal Dichalcogenides (TMDs) have demonstrated a wide range of remarkable properties for applications in next generation nano-electronics. These systems have displayed many “graphene-like” properties including a relatively high carrier mobility, mechanical flexibility, chemical and thermal stability, and moreover offer the significant advantage of a substantial band gap. However, the fabrication of high performance field-effect transistors (FETs) of TMDs is challenging mainly due to the formation of …