Nanoscience and Nanotechnology Commons^™

Towards Building A Prototype Spin-Logic Device, Ashish Verma Penumatcha

Open Access Dissertations

Since the late 1980s, several key discoveries, such as Giant and Tunneling Magne- toresistance, and advances in magnetic materials have paved the way for exponentially higher bit-densities in magnetic storage. In particular, the discovery of Spin-Transfer Torque (STT) has allowed information to be written to individual magnets using spin-currents. This has replaced the more traditional Oersted-field control used in field-MRAMs and allowed further scaling of magnetic-memories. A less obvious con- sequence of STT is that it has made possible a logic-technology based on magnets controlled by spin-polarized currents. Charge-coupled Spin Logic (CSL) is one such device proposal that couples a …

Nanophotonics For Dark Materials, Filters, And Optical Magnetism, Mengren Man

Open Access Dissertations

Research on nanophotonic structures for three application areas is described, a near perfect optical absorber based on a graphene/dielectric stack, an ultraviolet bandpass filter formed with an aluminum/dielectric stack, and structures exhibiting homogenizable magnetic properties at infrared frequencies. The graphene stack can be treated as a effective, homogenized medium that can be designed to reflect little light and absorb an astoundingly high amount per unit thickness, making it an ideal dark material and providing a new avenue for photonic devices based on two-dimensional materials. Another material stack arrangement with thin layers of metal and insulator forms a multi-cavity filter that …

Laser Direct Written Silicon Nanowires For Electronic And Sensing Applications, Woongsik Nam

Open Access Dissertations

Silicon nanowires are promising building blocks for high-performance electronics and chemical/biological sensing devices due to their ultra-small body and high surface-to-volume ratios. However, the lack of the ability to assemble and position nanowires in a highly controlled manner still remains an obstacle to fully exploiting the substantial potential of nanowires. Here we demonstrate a one-step method to synthesize intrinsic and doped silicon nanowires for device applications. Sub-diffraction limited nanowires as thin as 60 nm are synthesized using laser direct writing in combination with chemical vapor deposition, which has the advantages of in-situ doping, catalyst-free growth, and precise control of position, …

Non-Silicon Mosfets And Circuits With Atomic Layer Deposited Higher-K Dielectrics, Lin Dong

Open Access Dissertations

The quest for technologies beyond 14nm node complementary metal-oxide-semiconductor (CMOS) devices has now called for research on higher-k gate dielectrics integration with high mobility channel materials such as III-V semiconductors and germanium. Ternary oxides, such as La2-xYxO3 and LaAlO3, have been considered as strong candidates due to their high dielectric constants and good thermal stability. Meanwhile, the unique abilities of delivering large area uniform thin film, excellent controlling of composition and thickness to an atomic level, which are keys to ultra-scaled devices, have made atomic layer deposition (ALD) technique an excellent choice.

In this thesis, we systematically study the atomic …

Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis On Silicon Substrate, Sung Hwan Chung

Open Access Dissertations

Semiconductor nanowires synthesized via the vapor-liquid-solid (VLS) mechanism have attracted extensive research interest in recent years owing to their unique structure as a promising candidate for the future electronic devices. Germanium and silicon nanowires, in particular, are compatible with the current silicon-based technology via direct assembly. However, one of the main challenges for the successful nanowire application in large-scale is the lack of the method for obtaining nanowires in desired positions and directions. Therefore, the comprehensive, systematic understanding of epitaxial nanowire growth and the more suitable method to align nanowires on novel structure are required. In this work, the synthesis …