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Iii-V Bismide Optoelectronic Devices, Dongsheng Fan

Graduate Theses and Dissertations

This dissertation explores modeling, molecular beam epitaxy growth, and fabrication of III-V bismide optoelectronic devices, which are of great importance in modern applications of telecommunication, gas sensing, environment monitoring, etc. In the current room-temperature continuous-wave operational GaSb-based type-I InGaAsSb/AlGaInAsSb quantum well laser diodes in 3-4 um mid-wavelength range, the lasing wavelength and performance of the devices are limited due to the lack of hole confinement in the active regions. In this dissertation, a novel GaSb-based GaInAsSbBi material is proposed to replace the conventional InGaAsSb material in the quantum well region, which enables the laser diodes achieve up to 4 µm …