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Articles 1 - 5 of 5
Full-Text Articles in Nanoscience and Nanotechnology
Fabrication, Characterization And Simulation Of Non-Lithographic Nanostructures And Their Potential Applications, Neelanjan Bhattacharya
Fabrication, Characterization And Simulation Of Non-Lithographic Nanostructures And Their Potential Applications, Neelanjan Bhattacharya
UNLV Theses, Dissertations, Professional Papers, and Capstones
The dissertation describes the formation of porous silicon through the pores of porous alumina on a silicon substrate. Porous silicon, by itself, is inherently a non-uniform material that has non-uniform optical and electronic properties. In addition, it is also mechanically fragile material requiring careful material handling. The porous silicon fabricated through the nanosized pores of porous alumina are expected to mitigate these problems, thereby enhancing commercial viability of the device. The porous silicon as well the porous alumina have been synthesized through anodisation for various parameters and also various types of anodizing electrolytes. The porous silicon, so obtained have been …
The Applications And Limitations Of Printable Batteries, Matthew Delmanowski
The Applications And Limitations Of Printable Batteries, Matthew Delmanowski
Graphic Communication
This study focuses on the potential applications for printed batteries and how they could affect the printing industry. It also analyzes the main problems associated with manufacturing this technology and what needs to be done to overcome these issues. To find the answers to these questions, two methods of research were used. The first was through the elite and specialized interviewing of Dr. Scott Williams of Rochester Institute of Technology and Professor Nancy Cullins from Cal Poly. The second form of research was a common, yet useful, method called secondary research. This entailed looking at recent written research papers about …
Enhanced Light Extraction Efficiency From Gan Light Emitting Diodes Using Photonic Crystal Grating Structures, Simeon S. Trieu
Enhanced Light Extraction Efficiency From Gan Light Emitting Diodes Using Photonic Crystal Grating Structures, Simeon S. Trieu
Master's Theses
Gallium nitride (GaN) light emitting diodes (LED) embody a large field of research that aims to replace inefficient, conventional light sources with LEDs that have lower power, higher luminosity, and longer lifetime. This thesis presents an international collaboration effort between the State Key Laboratory for Mesoscopic Physics in Peking University (PKU) of Beijing, China and the Electrical Engineering Department of California Polytechnic State University, San Luis Obispo. Over the course of 2 years, Cal Poly’s side has simulated GaN LEDs within the pure blue wavelength spectrum (460nm), focusing specifically on the effects of reflection gratings, transmission gratings, top and bottom …
Nano-Scaled Fet Device For Cmos Technology, Prabhat Ranjan Pathak
Nano-Scaled Fet Device For Cmos Technology, Prabhat Ranjan Pathak
Dissertations
In this work the 3-D structure of the Accumulation mode (ACM) and Enhance mode (ECM) FinFET was developed by the Taurus-Device Editor. The design of both ACM and ECM FinFET was optimized for high-performance IC applications to meet ITRS specification for Ioff current, for 9nm gate length. The design of ACM and ECM FinFET is optimized, analyzed and compared against each other with respect to Darin Induced Barrier Lower (DIBL), Sub-threshold Swing(SS), operation and performance characteristics with varying electrical and physical parameters Silicon thickness (Tsi), Source/Drain doping gradient (σsd), electrical channel length (Leff ), …
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry continues scaling devices to smaller sizes, the need for next generation lithography technology for fabricating these small structures has always been at the forefront. Over the past few years, conventional optical lithography technology which has adopted a series of resolution enhancement techniques to support the scaling needs is expected to run out of steam in the near future. Extreme Ultra Violet lithography (EUVL) is being actively pursued by the semiconductor industry as one of the most promising next generation lithographic technologies. Most of the issues unique to EUVL arise from the use of 13.5 nm light …