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Mechanisms Of Euv Exposure : Photons, Electrons And Holes, Amrit Kausik Narasimhan

Legacy Theses & Dissertations (2009 - 2024)

The microelectronics industry’s movement toward smaller and smaller feature sizes has necessitated a shift to Extreme Ultra-Violet (EUV) lithography to be able to pattern sub 20-nm features, much like earlier shifts from i-line to 248 nm. However, this shift from 193-nm lithography to EUV (13.5 nm) poses significant obstacles. EUV is the first optical lithography to operate in an energy range (92 eV per photon vs. 6.4 eV per photon for 193 nm lithography) above the electron binding energies of common resist atomic species. This significant energy increase complicates resist design. For exposures of equal dose, resists receive 14 times …