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Non-Silicon Mosfets And Circuits With Atomic Layer Deposited Higher-K Dielectrics, Lin Dong Oct 2013

Non-Silicon Mosfets And Circuits With Atomic Layer Deposited Higher-K Dielectrics, Lin Dong

Open Access Dissertations

The quest for technologies beyond 14nm node complementary metal-oxide-semiconductor (CMOS) devices has now called for research on higher-k gate dielectrics integration with high mobility channel materials such as III-V semiconductors and germanium. Ternary oxides, such as La2-xYxO3 and LaAlO3, have been considered as strong candidates due to their high dielectric constants and good thermal stability. Meanwhile, the unique abilities of delivering large area uniform thin film, excellent controlling of composition and thickness to an atomic level, which are keys to ultra-scaled devices, have made atomic layer deposition (ALD) technique an excellent choice.

In this thesis, we systematically study the atomic ...