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Non-Silicon Mosfets And Circuits With Atomic Layer Deposited Higher-K Dielectrics, Lin Dong

Open Access Dissertations

The quest for technologies beyond 14nm node complementary metal-oxide-semiconductor (CMOS) devices has now called for research on higher-k gate dielectrics integration with high mobility channel materials such as III-V semiconductors and germanium. Ternary oxides, such as La2-xYxO3 and LaAlO3, have been considered as strong candidates due to their high dielectric constants and good thermal stability. Meanwhile, the unique abilities of delivering large area uniform thin film, excellent controlling of composition and thickness to an atomic level, which are keys to ultra-scaled devices, have made atomic layer deposition (ALD) technique an excellent choice.

In this thesis, we systematically study the atomic …

Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis On Silicon Substrate, Sung Hwan Chung

Open Access Dissertations

Semiconductor nanowires synthesized via the vapor-liquid-solid (VLS) mechanism have attracted extensive research interest in recent years owing to their unique structure as a promising candidate for the future electronic devices. Germanium and silicon nanowires, in particular, are compatible with the current silicon-based technology via direct assembly. However, one of the main challenges for the successful nanowire application in large-scale is the lack of the method for obtaining nanowires in desired positions and directions. Therefore, the comprehensive, systematic understanding of epitaxial nanowire growth and the more suitable method to align nanowires on novel structure are required. In this work, the synthesis …