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Elemental semiconductors; germanium; molecular dynamics method; nanostructured materials; potential energy functions; semiconductor heterojunctions; silicon; stress relaxation
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Full-Text Articles in Nanoscience and Nanotechnology
Strain Relaxation In Si/Ge/Si Nanoscale Bars From Molecular Dynamics Simulations, Yumi Park, Hasan Metin Atkulga, Ananth Y. Grama, Alejandro Strachan
Strain Relaxation In Si/Ge/Si Nanoscale Bars From Molecular Dynamics Simulations, Yumi Park, Hasan Metin Atkulga, Ananth Y. Grama, Alejandro Strachan
Birck and NCN Publications
We use molecular dynamics (MD) with the reactive interatomic potential ReaxFF to characterize the local strains of epitaxial Si/Ge/Si nanoscale bars as a function of their width and height. While the longitudinal strain (along the bars length) is independent of geometry, surface relaxation leads to transverse strain relaxation in the Ge section. This strain relaxation increases with increasing height of the Ge section and reduction in its width and is complete (i.e., zero transverse strain) for roughly square cross sections of Ge leading to a uniaxial strain state. Such strain state is desirable in some microelectronics applications. From the MD …
Strain Relaxation In Si/Ge/Si Nanoscale Bars From Molecular Dynamics Simulations, Yumi Park, Hasan Atkulga, Ananth Y. Grama, Alejandro Strachan
Strain Relaxation In Si/Ge/Si Nanoscale Bars From Molecular Dynamics Simulations, Yumi Park, Hasan Atkulga, Ananth Y. Grama, Alejandro Strachan
Birck and NCN Publications
We use molecular dynamics (MD) with the reactive interatomic potential ReaxFF to characterize the local strains of epitaxial Si/Ge/Si nanoscale bars as a function of their width and height. While the longitudinal strain (along the bars length) is independent of geometry, surface relaxation leads to transverse strain relaxation in the Ge section. This strain relaxation increases with increasing height of the Ge section and reduction in its width and is complete (i.e., zero transverse strain) for roughly square cross sections of Ge leading to a uniaxial strain state. Such strain state is desirable in some microelectronics applications. From the MD …