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Full-Text Articles in Nanoscience and Nanotechnology
Quantum And Classical Magnetoresistance In Ambipolar Topological Insulator Transistors With Gate-Tunable Bulk And Surface Conduction, Jifa Tian, Cuizu Chang, Helin Cao, Ke He, Xucun Ma, Qikun Xue, Yong P. Chen
Quantum And Classical Magnetoresistance In Ambipolar Topological Insulator Transistors With Gate-Tunable Bulk And Surface Conduction, Jifa Tian, Cuizu Chang, Helin Cao, Ke He, Xucun Ma, Qikun Xue, Yong P. Chen
Birck and NCN Publications
Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)(2)Te-3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning …
Observation Of Coulomb Repulsion Between Cu Intercalants In Cuxbi2se3, Chris Mann, Damien West, Ireneusz Miotkowski, Yong P. Chen, Shengbai Zhang, Chih-Kang Shih
Observation Of Coulomb Repulsion Between Cu Intercalants In Cuxbi2se3, Chris Mann, Damien West, Ireneusz Miotkowski, Yong P. Chen, Shengbai Zhang, Chih-Kang Shih
Birck and NCN Publications
Using scanning tunneling microscopy and ab initio simulations, we have identified several configurations for Cu dopants in CuxBi2Se3, with Cu intercalants being the most abundant. Through statistical analysis, we show strong short-range repulsive interactions between Cu intercalants. At intermediate range (>5 nm), the pair distribution function shows oscillatory structure along the < 10 (1) over bar > directions, which appear to be influenced by different diffusion barriers along the < 10 (1) over bar > and < 2 (1) over bar(1) over bar > directions.