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Articles 1 - 5 of 5
Full-Text Articles in Nanoscience and Nanotechnology
Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan
Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan
Graduate Theses and Dissertations
This research work, for the first time, investigated metal semiconductor-metal (MSM) zine oxide (ZnO) nanorod based ultra-violet (UV) detectors having a Wheatstone bridge design with a high
responsivity at room temperature and above, as well as a responsivity that was largely independent of the change in ambient conditions. The ZnO nanorods which acted as the sensing element of the detector were grown by a chemical growth technique. Studies were conducted to determine the effects on ZnO nanorod properties by varying the concentration of the chemicals used for the rod growth. These studies showed how the rod diameter and the deposition …
Fluorescence Characterization Of Quantum Dots For Use As Biomarkers, Logan M. Grimes
Fluorescence Characterization Of Quantum Dots For Use As Biomarkers, Logan M. Grimes
Materials Engineering
Fluorescence profiles of quantum dots (QDs) were characterized to select the ideal QDs for encapsulation in phospholipids for use as biomarkers to selectively adhere to cancer cells. QDs were synthesized and extracted 0, 30, 60, and 90 seconds after precursor compounds were mixed. These extractions were isolated by extraction time. Portions from each vial were coated in a zinc sulfide shelling procedure, leaving at least half of the QD solution unshelled. These samples were characterized over four days to monitor fluctuations in fluorescence. This was done utilizing an Ocean Optics spectrometer in conjunction with Spectra Suite software. The central wavelength, …
Application Of Quantum Dots Onto Glass Wafers As A Feasibility Test For The Spectral Down Conversion Of Uv Light For Solar Cells, Anthony Fong
Materials Engineering
Quantum dots have the ability to convert high energy photons into multiple lower energy photons. Down conversion of such high energy photons from sources such as UV light can be beneficial for applications on solar cells which waste much of the energy in the form of thermalization. To test this theory, a solar cell was hooked up to an Amprobe Solar Analyzer and tests were run to compare power output with and without the presence of quantum dots. Additionally, quantum dots were spin coated onto a glass wafer to determine its adhesion ability. Spectrometer readings were taken of the wafer …
Novel Bimetallic Plasmonic Nanomaterials, Ritesh Sachan
Novel Bimetallic Plasmonic Nanomaterials, Ritesh Sachan
Doctoral Dissertations
Plasmonic nanomaterials have attracted a lot of attention recently due to their application in various fields such as chemical and biological sensing, catalysis, energy harvesting and optical devices. However, there is a need to address several outstanding issues with these materials, including cost-effective synthesis, tunability in plasmonic characteristics, and long term stability. In this thesis, we have focused on bimetallic nanoparticles (NPs) of Ag and Co due to their immiscibility as well as their individual properties. First, a pulsed laser induced dewetting route was used to synthesize Ag-Co bimetallic plasmonic NPs. An synthesis parameter space was derived to show the …
Iii-V Bismide Optoelectronic Devices, Dongsheng Fan
Iii-V Bismide Optoelectronic Devices, Dongsheng Fan
Graduate Theses and Dissertations
This dissertation explores modeling, molecular beam epitaxy growth, and fabrication of III-V bismide optoelectronic devices, which are of great importance in modern applications of telecommunication, gas sensing, environment monitoring, etc. In the current room-temperature continuous-wave operational GaSb-based type-I InGaAsSb/AlGaInAsSb quantum well laser diodes in 3-4 um mid-wavelength range, the lasing wavelength and performance of the devices are limited due to the lack of hole confinement in the active regions. In this dissertation, a novel GaSb-based GaInAsSbBi material is proposed to replace the conventional InGaAsSb material in the quantum well region, which enables the laser diodes achieve up to 4 µm …