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Full-Text Articles in Nanoscience and Nanotechnology

Dynamical Thermal Conductivity Of Suspended Graphene Ribbons In The Hydrodynamic Regime, Zlatan Aksamija, Arnab K. Majee Jul 2018

Dynamical Thermal Conductivity Of Suspended Graphene Ribbons In The Hydrodynamic Regime, Zlatan Aksamija, Arnab K. Majee

Zlatan Aksamija

The steady-state behavior of thermal transport in bulk and nanostructured semiconductors has been widely
studied, both theoretically and experimentally. On the other hand, fast transients and frequency dynamics of
thermal conduction has been given less attention. The frequency response of thermal conductivity has become
more crucial in recent years, especially in light of the constant rise in the clock frequencies in microprocessors
and terahertz sensing applications. Thermal conductivity in response to a time-varying temperature field starts
decaying when the frequency exceeds a cutoff frequency Omega_c, which is related to the inverse of phonon relaxation time τ, on the order of …


Power Dissipation Of Wse2 Field-Effect Transistors Probed By Low- Frequency Raman Thermometry, Zlatan Aksamija, Cameron J. Foss, Arnab K. Majee, Amin Salehi-Khojin Jun 2018

Power Dissipation Of Wse2 Field-Effect Transistors Probed By Low- Frequency Raman Thermometry, Zlatan Aksamija, Cameron J. Foss, Arnab K. Majee, Amin Salehi-Khojin

Zlatan Aksamija

The ongoing shrinkage in the size of two-dimensional (2D) electronic circuitry results in high power densities during device operation, which could cause a significant temperature rise within 2D channels. One challenge in
Raman thermometry of 2D materials is that the commonly used high-frequency modes do not precisely represent the temperature rise in some 2D materials because of peak broadening and intensity weakening at elevated temperatures. In this work, we show that a low-frequency E2g 2 shear mode can be used to accurately extract temperature and measure thermal boundary conductance (TBC) in backgated tungsten diselenide (WSe2) field-effect transistors, whereas the high-frequency …


Interfacial Thermal Transport In Monolayer Mos2- And Graphene-Based Devices, Zlatan Aksamija, Amin Salehi-Khojin, Cameron J. Foss, Arnab K. Majee, Fatemeh Khalili-Araghi Jul 2017

Interfacial Thermal Transport In Monolayer Mos2- And Graphene-Based Devices, Zlatan Aksamija, Amin Salehi-Khojin, Cameron J. Foss, Arnab K. Majee, Fatemeh Khalili-Araghi

Zlatan Aksamija

In many device architectures based on 2D materials, a major part of the heat generated in hot-spots dissipates in the through-plane direction where the interfacial thermal resistances can significantly restrain the heat removal
capability of the device. Despite its importance, there is an enormous (1–2 orders of magnitude) disagreement in the literature on the interfacial thermal transport characteristics of MoS2 and other transition metal dichalcogenides (TMDs) (0.1–14 MW m−2 K−1). In this report, the thermal boundary conductance (TBC) across MoS2 and graphene monolayers with SiO2/Si and sapphire substrates is systematically investigated using a
custom-made electrical thermometry platform followed by 3D …


Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties And Applications, Urcan Guler, Sergey Suslov, Alexander V. Kildishev, Alexandra Boltasseva, Vladimir M. Shalaev Dec 2014

Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties And Applications, Urcan Guler, Sergey Suslov, Alexander V. Kildishev, Alexandra Boltasseva, Vladimir M. Shalaev

U. Guler

Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average size of 50 nm, which was found to be the optimum size for cellular uptake with gold nanoparticles [1], exhibit plasmon resonance in the biological transparency window and demonstrate a high absorption efficiency. A self-passivating native oxide at the surface of the nanoparticles provides an additional degree of freedom for surface functionalization. The titanium oxide shell surrounding the plasmonic core can create new opportunities …


Biogenic Fabrication Of Au@Ceo2 Nanocomposite With Enhanced Visible Light Activity, Mohammad Mansoob Khan Dr, S. A. Ansari, M. O. Ansari, B. K. Min, J Lee, M. H. Cho Apr 2014

Biogenic Fabrication Of Au@Ceo2 Nanocomposite With Enhanced Visible Light Activity, Mohammad Mansoob Khan Dr, S. A. Ansari, M. O. Ansari, B. K. Min, J Lee, M. H. Cho

Dr. Mohammad Mansoob Khan

This study reports a biogenic approach to the synthesis of Au@CeO2 nanocomposite using electrochemically active biofilms (EABs) in water under normal pressure and 30 °C. This work presents the results of extensive morphological, structural, optical, visible light photoelectrochemical and photocatalytic studies of Au@CeO2 nanocomposite. The presence of a large number of interfaces between Au nanoparticles and CeO2 for charge transfer is believed to play a key role in enhancing the optical and visible light photoelectrochemical and photocatalytic performance of Au@CeO2 nanocomposite. The enhanced visible light degradation of methyl orange and methylene blue by Au@CeO2 nanocomposite was much higher than that …


Band Gap Engineered Tio2 Nanoparticles For Visible Light Induced Photoelectrochemical And Photocatalytic Studies, Mohammad Mansoob Khan Dr, S A. Ansari, D Pradhan, D H. Han, J Lee, M. H. Cho Dec 2013

Band Gap Engineered Tio2 Nanoparticles For Visible Light Induced Photoelectrochemical And Photocatalytic Studies, Mohammad Mansoob Khan Dr, S A. Ansari, D Pradhan, D H. Han, J Lee, M. H. Cho

Dr. Mohammad Mansoob Khan

Visible light-active TiO2 (m-TiO2) nanoparticles were obtained by an electron beam treatment of commercial TiO2 (p-TiO2) nanoparticles. The m-TiO2 nanoparticles exhibited a distinct red-shift in the UV-visible absorption spectrum and a much narrower band gap (2.85 eV) due to defects as confirmed by diffuse reflectance spectroscopy (DRS), photoluminescence (PL), X-ray diffraction, Raman spectroscopy, electron paramagnetic resonance, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS) and linear scan voltammetry (LSV). The XPS revealed changes in the surface states, composition, Ti4+ to Ti3+ ratio, and oxygen deficiencies in the m-TiO2. The valence band XPS, DRS and PL results were …


Biogenic Synthesis, Photocatalytic, And Photoelectrochemical Performance Of Ag–Zno Nanocomposite, S. A. Ansari, Mohammad Mansoob Khan Dr, M. O. Ansari, J. Lee, M. H. Cho Dec 2013

Biogenic Synthesis, Photocatalytic, And Photoelectrochemical Performance Of Ag–Zno Nanocomposite, S. A. Ansari, Mohammad Mansoob Khan Dr, M. O. Ansari, J. Lee, M. H. Cho

Dr. Mohammad Mansoob Khan

The development of coupled photoactive materials (metal/semiconductor) has resulted in significant advancements in heterogeneous visible light photocatalysis. This work reports the novel biogenic synthesis of visible light active Ag–ZnO nanocomposite for photocatalysis and photoelectrode using an electrochemically active biofilm (EAB). The results showed that the EAB functioned as a biogenic reducing tool for the reduction of Ag+, thereby eliminating the need for conventional reducing agents. The as-prepared Ag–ZnO nanocomposite was characterized by X-ray diffraction, transmission electron microscopy, diffuse reflectance spectroscopy, photoluminescence spectroscopy, and X-ray photoelectron spectroscopy. The photocatalytic experiments showed that the Ag–ZnO nanocomposite possessed excellent visible light photocatalytic activity …


Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen Jan 2013

Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen

Albert B Chen

Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …


Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen Dec 2012

Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen

Albert B Chen

Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.


The Impact Of Controlled Solvent Exposure On The Morphology, Structure And Function Of Bulk Heterojunction Solar Cells, Raghavendra R. Hegde Dr Dec 2012

The Impact Of Controlled Solvent Exposure On The Morphology, Structure And Function Of Bulk Heterojunction Solar Cells, Raghavendra R. Hegde Dr

Raghavendra R Hegde Dr

Films of poly(3-hexyl thiophene) (P3HT):[6,6]-phenyl C61-butyric acid methyl ester (PCBM) were controllably exposed to CS2 vapor in a column with a linear solvent vapor pressure gradient. Changes in the morphology of the P3HT:PCBM thin film were monitored and correlated to the ability of this thin film to act as the active layer in an organic solar cell. The results show that the crystallinity and crystal size of the P3HT increase initially with solvent vapor pressure and annealing time, but longer exposure to solvent decreases P3HT crystallinity and photovoltaic efficiency. Neutron reflectivity indicates that the PCBM segregates to the Si substrate …


Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. Bennett, L. Menon, D. Heiman Oct 2012

Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. Bennett, L. Menon, D. Heiman

Donald Heiman

Ordered arrays of GaMnAs magnetic semiconductor nanodots have been fabricated using anodic porous alumina templates as etch masks. The magnetic behavior is studied for prepared arrays with 40 nm dot diameter, 15 nm dot thickness, and 80 nm periodicity. The disklike nanodots exhibit an easy axis for fields applied in the radial direction and a hard axis in the smaller direction. In the radial direction superparamagnetism is observed with a blocking temperature of 30 K. The fabrication technique is convenient for preparing nanodot arrays of compound semiconductors that cannot be formed by self-assembly techniques.


Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. P. Bennett, L. Menon, D. Heiman Oct 2012

Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. P. Bennett, L. Menon, D. Heiman

Latika Menon

Ordered arrays of GaMnAs magnetic semiconductor nanodots have been fabricated using anodic porous alumina templates as etch masks. The magnetic behavior is studied for prepared arrays with 40 nm dot diameter, 15 nm dot thickness, and 80 nm periodicity. The disklike nanodots exhibit an easy axis for fields applied in the radial direction and a hard axis in the smaller direction. In the radial direction superparamagnetism is observed with a blocking temperature of 30 K. The fabrication technique is convenient for preparing nanodot arrays of compound semiconductors that cannot be formed by self-assembly techniques.


Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen Jun 2012

Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen

Albert B Chen

Non-volatile random access memories (NVRAM) are promising data storage and processing devices. Various NVRAM, such as FeRAM and MRAM, have been studied in the past. But resistance switching random access memory (RRAM) has demonstrated the most potential for replacing flash memory in use today. In this dissertation, a novel RRAM material design that relies upon an electronic transition, rather than a phase change (as in chalcogenide Ovonic RRAM) or a structural change (such in oxide and halide filamentary RRAM), is investigated. Since the design is not limited to a single material but applicable to general combinations of metals and insulators, …


The Miscibility And Depth Profile Of Pcbm In P3ht: Thermodynamic Information To Improve Organic Photovoltaics, Raghavendra R. Hegde Dr Apr 2012

The Miscibility And Depth Profile Of Pcbm In P3ht: Thermodynamic Information To Improve Organic Photovoltaics, Raghavendra R. Hegde Dr

Raghavendra R Hegde Dr

Recent work has shown that poly(3-hexylthiophene) (P3HT) and the surface-functionalized fullerene 1-(3-methyloxycarbonyl)propyl(1-phenyl[6,6])C(61) (PCBM) are much more miscible than originally thought, and the evidence of this miscibility requires a return to understanding the optimal morphology and structure of organic photovoltaic active layers. This manuscript describes the results of experiments that were designed to provide quantitative thermodynamic information on the miscibility, interdiffusion, and depth profile of P3HT : PCBM thin films that are formed by thermally annealing initial bilayers. It is found that the resultant thin films consist of a 'bulk' layer that is not influenced by the air or substrate surface. …


Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen Jun 2011

Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen

Albert B Chen

Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.


Preparation Of Wo3 Nanoparticles Using Cetyl Trimethyl Ammonium Bromide Supermolecular Template, Nilofar Asim, S. Radiman, M.A. Bin Yarmo Jan 2009

Preparation Of Wo3 Nanoparticles Using Cetyl Trimethyl Ammonium Bromide Supermolecular Template, Nilofar Asim, S. Radiman, M.A. Bin Yarmo

Nilofar Asim

WO3 is one of the most interested metal oxides because of its application as catalysts, sensors, electrochromic devices, ceramic, solar cell, pigments and so on. More investigation is needed to find the good and low cost method for preparation of WO3 nanoparticles with uniform morphology and narrow distribution using a surfactant mediated method. Approach: In this study, the synthesis of WO3 nanoparticles was accomplished using a cationic surfactant (cetyl trimethyl ammonium bromide) as the organic supermolecular template and WCl6 and NH4 OH as the inorganic precursor and counter ion source, respectively. The effects of reaction temperature and surfactant concentration in …


Dielectric Relaxation Behaviour Of Glycine In Acqueous Solution Medium In The Microwave Frequency Region, Ajaya Kumar Kavala Apr 2008

Dielectric Relaxation Behaviour Of Glycine In Acqueous Solution Medium In The Microwave Frequency Region, Ajaya Kumar Kavala

Mr Ajaya Kumar Kavala

No abstract provided.