Nanoscience and Nanotechnology Commons^™

Trailer Mounted Bursting Energy Absorption System, John D. Reid, John R. Rohde, Dean L. Sicking

Department of Mechanical and Materials Engineering: Faculty Publications

A portable crash attenuation System having a trailer frame and an energy absorption mechanism attached thereto. The absorption mechanism has a first Stage pivotably connected to a Second Stage and the Second Stage is pivotably connected to the frame. By pivoting the Stages about hinges the attenuation System may be folded from an extended, deployed position or mode to a shortened transit mode for easy relocation of the entire attenuation System.

Optically Transparent, Scratch-Resistant, Diamond-Like Carbon Coatings, Xiao-Ming He, Deok-Hyung Lee, Michael A. Nastasi, Kevin C. Walter, Michel G. Tuszewski

Department of Mechanical and Materials Engineering: Faculty Publications

A plasma-based method for the deposition of diamond-like carbon (DLC) coatings is described. The process uses a radio-frequency inductively coupled discharge to generate a plasma at relatively low gas pressures. The deposition process is environmentally friendly and scaleble to large areas, and components that have geometrically complicated surfaces can be processed. The method has been used to deposit abherent 100-400 nm thick DLC coatings on metals, glass, and polymers. These coatings are between three and four times harder than steel and are therefore scratch resistant, and transparent to visible light. Boron and silicon doping of the DLC coatings have produced …

Method For Producing Fluorinated Damond-Like Carbon Films, Marko J. Hakovirta, Michael Nastasi, Deok-Hyung Lee, Xiao-Ming He

Department of Mechanical and Materials Engineering: Faculty Publications

Fluorinated, diamond-like carbon (F-DLC) films are produced by a pulsed, glow-discharge plasma immersion ion processing procedure. The pulsed, glow-discharge plasma was generated at a pressure of 1 Pa from an acetylene (CH) and hexafluoroethane (CF) gas mixture, and the fluorinated, diamond-like carbon films were deposited on silicon <100>Substrates. The film hardness and wear resistance were found to be strongly dependent on the fluorine content incorporated into the coatings. The hardness of the F-DLC films was found to decrease considerably when the fluorine content in the coatings reached about 20%. The contact angle of water on the F-DLC coatings was found …

Microstructural Study Of Nanoprecipitates In Rra Treated Al-7075 T6 Using Afm/Ufm/Stem, Samuel J.M. Kuhr, Margaret Pinnell, Daniel Eylon

Mechanical and Aerospace Engineering Faculty Publications

7075 T651 aluminum alloy is frequently used in aircraft applications for its high strength to weight ratio. However, aircraft parts made of this alloy have been plagued by stress corrosion cracking (SCC). Retrogression and re-aging (RRA) is a post T651 two-stage heat treatment that provides improved SCC resistance with minimal loss in tensile strength. In this study, various forms of microscopy and mechanical testing are used to investigate how the RRA process affects the microstructure.

The microscopic observations in this paper show that the precipitates in the aluminum alloy coarsen and that the grain boundary regions are depleted of copper …

Alloy States In Dilute Gaas1-XNX Alloys (X<1%), X. D. Luo, Jinsong Huang, Z. Y. Xu, C. L. Yang, J. Liu, W. K. Ge, Y. Zhang, A. Mascarenhas, H. P. Xin, C. W. Tu

Department of Mechanical and Materials Engineering: Faculty Publications

A set of GaAs_1-xN_x samples with small nitrogen composition (x<1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and time-resolved PL. In the PL spectra, an extra transition located at the higher-energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the PL peak was identified as a transition of alloy band edge-related recombination in GaAsN. The PL dynamics further confirms its intrinsic nature as being associated with the band edge rather than N-related bound states.