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Full-Text Articles in Nanoscience and Nanotechnology

Fabrication And Characterization Of Nanofiber Nylon-6-Mwcnt As An Electrochemical Sensor For Sodium Ions Concentration Detection In Sweat, Kelsey Mills Jan 2019

Fabrication And Characterization Of Nanofiber Nylon-6-Mwcnt As An Electrochemical Sensor For Sodium Ions Concentration Detection In Sweat, Kelsey Mills

Williams Honors College, Honors Research Projects

Fabrication and characterization nylon-6-MWCNT nanofiber as an electrochemical sensor to detect sodium ion concentrations specifically in sweat. Using contact angle to determine surface morphology and chronoamperometry testing to identify ideal sensor conditions, tests optimized parameters like weight percent of nylon or other polymers, carbon nanotube (CNT) isomer, and solution concentration to determine reproducibility of functional sensors. Utilizing the electric qualities of carbon nanotubes partnered with the sodium ion selectivity of calixarene treatment and polymers unique properties like flexibility and scalability create open an arena for optimizing sodium ion sensors for further development for functional prototypes. Morphology tests showed that the ...


Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed Jan 2019

Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed

Theses and Dissertations

Nanomagnetic devices have been projected as an alternative to transistor-based switching devices due to their non-volatility and potentially superior energy-efficiency. The energy efficiency is enhanced by the use of straintronics which involves the application of a voltage to a piezoelectric layer to generate a strain which is ultimately transferred to an elastically coupled magnetostrictive nanomaget, causing magnetization rotation. The low energy dissipation and non-volatility characteristics make straintronic nanomagnets very attractive for both Boolean and non-Boolean computing applications. There was relatively little research on straintronic switching in devices built with real nanomagnets that invariably have defects and imperfections, or their adaptation ...


Resonant Acoustic Wave Assisted Spin-Transfer-Torque Switching Of Nanomagnets, Austin R. Roe Jan 2019

Resonant Acoustic Wave Assisted Spin-Transfer-Torque Switching Of Nanomagnets, Austin R. Roe

Theses and Dissertations

We studied the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of resonant surface acoustic waves (r-SAW) and spin-transfer-torque (STT). The magnetization dynamics were simulated using the Landau-Lifshitz-Gilbert equation under macrospin assumption with the inclusion of thermal noise. We studied such r-SAW assisted STT switching of nanomagnets for both in-plane elliptical and circular perpendicular magnetic anisotropy (PMA) nanomagnets and show that while thermal noise affects switching probability in in-plane nanomagnets, the PMA nanomagnets are relatively robust to the ...


Exploration Of Radiation Damage Mechanism In Mems Devices., Pranoy Deb Shuvra Dec 2018

Exploration Of Radiation Damage Mechanism In Mems Devices., Pranoy Deb Shuvra

Electronic Theses and Dissertations

We explored UV, X-ray and proton radiation damage mechanisms in MEMS resonators. T-shaped MEMS resonators of different dimensions were used to investigate the effect of radiation. Radiation damage is observed in the form of resistance and resonance frequency shift of the device. The resistance change indicates a change in free carrier concentration and mobility, while the resonance frequency change indicates a change in mass and/or elastic constant. For 255nm UV radiation, we observed a persistent photoconductivity that lasts for about 60 hours after radiation is turned off. The resonance frequency also decreases 40-90 ppm during irradiation and slowly recovers ...


Gesn Thin Film Epitaxy And Quantum Wells For Optoelectronic Devices, Perry Christian Grant Dec 2018

Gesn Thin Film Epitaxy And Quantum Wells For Optoelectronic Devices, Perry Christian Grant

Theses and Dissertations

Group IV photonics is an effort to generate viable infrared optoelectronic devices using group IV materials. Si-based optoelectronics have received monumental research since Si is the heart of the electronics industry propelling our data driven world. Silicon however, is an indirect material whose optical characteristics are poor compared to other III-IV semiconductors that make up the optoelectronics industry. There have been major efforts to integrate III-V materials onto Si substrates. Great progress on the integration of these III-V materials has occurred but incompatibility with CMOS processing has presented great difficulty in this process becoming a viable and cost-effective solution. Germanium ...


Spice Based Compact Model For Electrical Switching Of Antiferromagnet, Xe Jin Chan, Jan Kaiser, Pramey Upadhyaya Aug 2018

Spice Based Compact Model For Electrical Switching Of Antiferromagnet, Xe Jin Chan, Jan Kaiser, Pramey Upadhyaya

The Summer Undergraduate Research Fellowship (SURF) Symposium

A simulation framework that can model the behavior of antiferromagnets (AFMs) is essential to building novel high-speed devices. The electrical switching of AFMs allows for high performance memory applications. With new phenomena in spintronics being discovered, there is a need for flexible and expandable models. With that in mind, we developed a model for AFMs which can be used to simulate AFM switching behavior in SPICE. This approach can be modified for adding modules, keeping pace with new developments. The proposed AFM switching model is based on the Landau-Lifshitz-Gilbert equation (LLG). LLG along with an exchange coupling module is implemented ...


Voltage-Controlled Deposition Of Nanoparticles For Next Generation Electronic Materials, Subhodip Maulik May 2018

Voltage-Controlled Deposition Of Nanoparticles For Next Generation Electronic Materials, Subhodip Maulik

LSU Doctoral Dissertations

This work presents both a feasibility study and an investigation into the voltage-controlled spray deposition of different nanoparticles, namely, carbon nanotubes (CNTs), as well as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) from the transition metal dichalcogenides (TMDCs) family of materials. The study considers five different types of substrates as per their potential application to next-generation device electronics. The substrates selected for this research were: 1) aluminum as a conducting substrate, 2) silicon as a semiconducting substrate, 3) glass, silicon dioxide (SiO2), and syndiotactic poly methyl methacrylate (syndiotactic PMMA) as insulating substrates.

Since the 1990’s, carbon ...


Glucose Level Estimation Based On Invasive Electrochemical, And Non-Invasive Optical Sensing Methods, Sanghamitra Mandal May 2018

Glucose Level Estimation Based On Invasive Electrochemical, And Non-Invasive Optical Sensing Methods, Sanghamitra Mandal

Theses and Dissertations

The purpose of this research is to design and fabricate sensors for glucose detection using inexpensive approaches. My first research approach is the fabrication of an amperometric electrochemical glucose sensor, by exploiting the optical properties of semiconductors and structural properties of nanostructures, to enhance the sensor sensitivity and response time. Enzymatic electrochemical sensors are fabricated using two different mechanisms: (1) the low-temperature hydrothermal synthesis of zinc oxide nanorods, and (2) the rapid metal-assisted chemical etching of silicon (Si) to synthesize Si nanowires. The concept of gold nano-electrode ensembles is then employed to the sensors in order to boost the current ...


Design, Fabrication, And Characterization Of All-Inorganic Quantum Dot Light Emitting Diodes, Ramesh Vasan May 2018

Design, Fabrication, And Characterization Of All-Inorganic Quantum Dot Light Emitting Diodes, Ramesh Vasan

Theses and Dissertations

Quantum dot light emitting diodes are investigated as a replacement to the existing organic light emitting diodes that are commonly used for thin film lighting and display applications. In this, all-inorganic quantum dot light emitting diodes with inorganic quantum dot emissive layer and inorganic charge transport layers are designed, fabricated, and characterized. Inorganic materials are more environmentally stable and can handle higher current densities than organic materials. The device consists of CdSe/ZnS alloyed core/shell quantum dots as the emissive layer and metal oxide charge transport layer. The charge transport in these devices is found to occur through resonant ...


Parallel Algorithms For Time Dependent Density Functional Theory In Real-Space And Real-Time, James Kestyn Jan 2018

Parallel Algorithms For Time Dependent Density Functional Theory In Real-Space And Real-Time, James Kestyn

Doctoral Dissertations

Density functional theory (DFT) and time dependent density functional theory (TDDFT) have had great success solving for ground state and excited states properties of molecules, solids and nanostructures. However, these problems are particularly hard to scale. Both the size of the discrete system and the number of needed eigenstates increase with the number of electrons. A complete parallel framework for DFT and TDDFT calculations applied to molecules and nanostructures is presented in this dissertation. This includes the development of custom numerical algorithms for eigenvalue problems and linear systems. New functionality in the FEAST eigenvalue solver presents an additional level of ...


The Efficacy Of Programming Energy Controlled Switching In Resistive Random Access Memory (Rram), David Malien Nminibapiel Jul 2017

The Efficacy Of Programming Energy Controlled Switching In Resistive Random Access Memory (Rram), David Malien Nminibapiel

Electrical & Computer Engineering Theses & Disssertations

Current state-of-the-art memory technologies such as FLASH, Static Random Access Memory (SRAM) and Dynamic RAM (DRAM) are based on charge storage. The semiconductor industry has relied on cell miniaturization to increase the performance and density of memory technology, while simultaneously decreasing the cost per bit. However, this approach is not sustainable because the charge-storage mechanism is reaching a fundamental scaling limit. Although stack engineering and 3D integration solutions can delay this limit, alternate strategies based on non-charge storage mechanisms for memory have been introduced and are being actively pursued.

Resistive Random Access Memory (RRAM) has emerged as one of the ...


Low-Temperature Fabrication Process For Integrated High-Aspect Ratio Metal Oxide Nanostructure Semiconductor Gas Sensors, William Paul Clavijo Jan 2017

Low-Temperature Fabrication Process For Integrated High-Aspect Ratio Metal Oxide Nanostructure Semiconductor Gas Sensors, William Paul Clavijo

Theses and Dissertations

This work presents a new low-temperature fabrication process of metal oxide nanostructures that allows high-aspect ratio zinc oxide (ZnO) and titanium dioxide (TiO2) nanowires and nanotubes to be readily integrated with microelectronic devices for sensor applications. This process relies on a new method of forming a close-packed array of self-assembled high-aspect-ratio nanopores in an anodized aluminum oxide (AAO) template in a thin (2.5 µm) aluminum film deposited on a silicon and lithium niobate substrate (LiNbO3). This technique is in sharp contrast to traditional free-standing thick film methods and the use of an integrated thin aluminum film greatly ...


Measurement And Analysis Of Iii-V & Ii-Vi Infrared Detectors: Radiometric, Noise Spectrum, And Radiation Tolerance Performance, Vincent M. Cowan Nov 2016

Measurement And Analysis Of Iii-V & Ii-Vi Infrared Detectors: Radiometric, Noise Spectrum, And Radiation Tolerance Performance, Vincent M. Cowan

Nanoscience and Microsystems ETDs

Infrared (IR) hybrid detector arrays and discrete detectors operated in the space environment may be subjected to a variety of sources of natural radiation while in orbit. This means IR detectors intended for applications such as space-based intelligence, surveillance, and reconnaissance (ISR) or space-situational awareness (SSA) must not only have high performance (high quantum efficiency, h and low dark-current density, JD, and preferably minimal 1/f noise content), but also their radiation tolerance or ability to withstand the effects of the radiation they would expect to encounter in space must be characterized and well understood. As the effects of ...


Direct Band Gap Gallium Antimonide Phosphide (Gasbxp1-X) For Solar Fuels., Harry Benjamin Russell May 2016

Direct Band Gap Gallium Antimonide Phosphide (Gasbxp1-X) For Solar Fuels., Harry Benjamin Russell

Electronic Theses and Dissertations

Photoelectrochemical water splitting has been identified as a promising route for achieving sustainable energy future. However, semiconductor materials with the appropriate optical, electrical and electrochemical properties have yet to be discovered. In search of an appropriate semiconductor to fill this gap, GaSbP, a semiconductor never tested for PEC performance is proposed here and investigated. Density functional theory (DFT+U) techniques were utilized to predict band gap and band edge energetics for GaSbP alloys with low amount of antimony. The overall objective of this dissertation is to understand the suitability of GaSbxP1-x alloys for photoelectrochemical water splitting application ...


Nanosphere Lithography And Its Application In Rapid And Economic Fabrication Of Plasmonic Hydrogenated Amorphous Silicon Photovoltaic Devices, Chenlong Zhang Jan 2016

Nanosphere Lithography And Its Application In Rapid And Economic Fabrication Of Plasmonic Hydrogenated Amorphous Silicon Photovoltaic Devices, Chenlong Zhang

Dissertations, Master's Theses and Master's Reports

Solar photovoltaic (PV) devices harvest energy from solar radiation and convert it to electricity. PV technologies, as an alternative to traditional fossil fuels, use clean and renewable energy while minimizing pollution. For decades researchers have been developing thin film solar cells as an important alternatives to the relatively expensive bulk crystal solar cell technology. Among those, hydrogenated amorphous silicon (a-Si:H) solar cells prevails for good efficiency, non-toxic and materially abundant nature. However, a-Si:H thickness must be minimized to prevent light induced degradation, so optical enhancement is necessary. Light manipulation has to be applied and carefully engineered to trap ...


Hybrid Straintronics-Spintronics: Energy-Efficient Non-Volatile Devices For Boolean And Non-Boolean Computation, Ayan K. Biswas Jan 2016

Hybrid Straintronics-Spintronics: Energy-Efficient Non-Volatile Devices For Boolean And Non-Boolean Computation, Ayan K. Biswas

Theses and Dissertations

Research in future generation computing is focused on reducing energy dissipation while maintaining the switching speed in a binary operation to continue the current trend of increasing transistor-density according to Moore’s law. Unlike charge-based CMOS technology, spin-based nanomagnetic technology, based on switching bistable magnetization of single domain shape-anisotropic nanomagnets, has the potential to achieve ultralow energy dissipation due to the fact that no charge motion is directly involved in switching. However, switching of magnetization has not been any less dissipative than switching transistors because most magnet switching schemes involve generating a current to produce a magnetic field, or spin ...


Development Of Infrared And Terahertz Bolometers Based On Palladium And Carbon Nanotubes Using Roll To Roll Process, Amulya Gullapalli Jan 2015

Development Of Infrared And Terahertz Bolometers Based On Palladium And Carbon Nanotubes Using Roll To Roll Process, Amulya Gullapalli

Masters Theses

Terahertz region in the electromagnetic spectrum is the region between Infrared and Microwave. As the Terahertz region has both wave and particle nature, it is difficult to make a room temperature, fast, and sensitive detector in this region. In this work, we fabricated a Palladium based IR detector and a CNT based THz bolometer.

In Chapter 1, I give a brief introduction of the Terahertz region, the detectors already available in the market and different techniques I can use to test my detector. In Chapter 2, I explain about the Palladium IR bolometer, the fabrication technique I have used, and ...


Enhancing The Insulation Of Wide-Range Spectrum In The Pva/N Thin Film By Doping Zno Nanowires, Yu-Chen Lin, Ching-Hsiang Vhen, Liang-Yih Chen, Shih-Chieh Hsu, Shizhi Qian Jan 2014

Enhancing The Insulation Of Wide-Range Spectrum In The Pva/N Thin Film By Doping Zno Nanowires, Yu-Chen Lin, Ching-Hsiang Vhen, Liang-Yih Chen, Shih-Chieh Hsu, Shizhi Qian

Mechanical & Aerospace Engineering Faculty Publications

In this study, polyvinyl alcohol/nitrogen (PVA/N) hybrid thin films doped with sharp-sword ZnO nanowires with insulating effect and wide-range spectrum are demonstrated for the first time. PVA/N doped ZnO nanocomposites were developed by blending PVA and N-doped ZnO nanowires in water at room temperature. Measurements from the field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman, and photoluminescence emission (PL) spectra of the products show that nitrogen is successfully doped into the ZnO wurtzite crystal lattice. In addition, the refractive index of PVA/N doped ZnO hybrid thin films can be controlled by varying the doped ...


Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan Dec 2013

Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan

Theses and Dissertations

This research work, for the first time, investigated metal semiconductor-metal (MSM) zine oxide (ZnO) nanorod based ultra-violet (UV) detectors having a Wheatstone bridge design with a high

responsivity at room temperature and above, as well as a responsivity that was largely independent of the change in ambient conditions. The ZnO nanorods which acted as the sensing element of the detector were grown by a chemical growth technique. Studies were conducted to determine the effects on ZnO nanorod properties by varying the concentration of the chemicals used for the rod growth. These studies showed how the rod diameter and the deposition ...


Assessing The Mvs Model For Nanotransistors, Siyang Liu, Xingshu Sun, Mark S. Lundstrom Oct 2013

Assessing The Mvs Model For Nanotransistors, Siyang Liu, Xingshu Sun, Mark S. Lundstrom

The Summer Undergraduate Research Fellowship (SURF) Symposium

A simple semi-empirical compact MOSFET model has been developed, which is called MIT virtual source (MVS) model. Compare to other model used in industry, MVS model requires only a few parameters, most of which can be directly obtained from experiment, and produce accurate results. One aim of this paper is to test the applicability of the MVS model to transistor made from MoS2 rather than silicon. Another target is to determine the sustainability of the MVS model under different transistor tests. To achieve these goals, the MVS model will be used to fit the experimental data on MoS2 ...


Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan Sep 2013

Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan

Student Publications & Research

Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors ...


Iii-V Bismide Optoelectronic Devices, Dongsheng Fan May 2013

Iii-V Bismide Optoelectronic Devices, Dongsheng Fan

Theses and Dissertations

This dissertation explores modeling, molecular beam epitaxy growth, and fabrication of III-V bismide optoelectronic devices, which are of great importance in modern applications of telecommunication, gas sensing, environment monitoring, etc. In the current room-temperature continuous-wave operational GaSb-based type-I InGaAsSb/AlGaInAsSb quantum well laser diodes in 3-4 um mid-wavelength range, the lasing wavelength and performance of the devices are limited due to the lack of hole confinement in the active regions. In this dissertation, a novel GaSb-based GaInAsSbBi material is proposed to replace the conventional InGaAsSb material in the quantum well region, which enables the laser diodes achieve up to 4 ...


Ultra-Thin-Film Aln Contour-Mode Resonators For Sensing Applications, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza Feb 2013

Ultra-Thin-Film Aln Contour-Mode Resonators For Sensing Applications, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of ultra-thin-film (250 nm) aluminum nitride (AlN) microelectromechanical system (MEMS) contour mode resonators (CMRs) suitable for the fabrication of ultra-sensitive gravimetric sensors. The device thickness was opportunely scaled in order to increase the mass sensitivity, while keeping a constant frequency of operation. In this first demonstration the resonance frequency of the device was set to 178 MHz and a mass sensitivity as high as 38.96 KHz⋅μm2/fg was attained. This device demonstrates the unique capability of the CMR-S technology to decouple resonance frequency from mass ...


Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza Feb 2013

Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super high frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) aluminum nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt^2, in ...


Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza Feb 2013

Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) super high frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very ...


5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza Feb 2013

5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having ...


Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza Feb 2013

Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza

Matteo Rinaldi

A nanoenabled gravimetric chemical sensor prototype based on the large scale integration of single-stranded DNA (ss-DNA) decorated single-walled carbon nanotubes (SWNTs) as nanofunctionalization layer for aluminum nitride contour-mode resonant microelectromechanical (MEM) gravimetric sensors has been demonstrated. The capability of two distinct single strands of DNA bound to SWNTs to enhance differently the adsorption of volatile organic compounds such as dinitroluene (simulant for explosive vapor) and dymethyl-methylphosphonate (simulant for nerve agent sarin) has been verified experimentally. Different levels of sensitivity (17.3 and 28 KHz µm^2/fg) due to separate frequencies of operation (287 and 450 MHz) on the same ...


Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza Feb 2013

Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5%. These devices ...


Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen Jan 2013

Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen

Albert B Chen

Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating ...


Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen Dec 2012

Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen

Albert B Chen

Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.