Dynamical Thermal Conductivity Of Suspended Graphene Ribbons In The Hydrodynamic Regime, Zlatan Aksamija, Arnab K. Majee
Jul 2018
Dynamical Thermal Conductivity Of Suspended Graphene Ribbons In The Hydrodynamic Regime, Zlatan Aksamija, Arnab K. Majee
Zlatan Aksamija
The steady-state behavior of thermal transport in bulk and nanostructured semiconductors has been widely
studied, both theoretically and experimentally. On the other hand, fast transients and frequency dynamics of
thermal conduction has been given less attention. The frequency response of thermal conductivity has become
more crucial in recent years, especially in light of the constant rise in the clock frequencies in microprocessors
and terahertz sensing applications. Thermal conductivity in response to a time-varying temperature field starts
decaying when the frequency exceeds a cutoff frequency Omega_c, which is related to the inverse of phonon relaxation time τ, on the order of …
Power Dissipation Of Wse2 Field-Effect Transistors Probed By Low- Frequency Raman Thermometry, Zlatan Aksamija, Cameron J. Foss, Arnab K. Majee, Amin Salehi-Khojin
Jun 2018
Power Dissipation Of Wse2 Field-Effect Transistors Probed By Low- Frequency Raman Thermometry, Zlatan Aksamija, Cameron J. Foss, Arnab K. Majee, Amin Salehi-Khojin
Zlatan Aksamija
The ongoing shrinkage in the size of two-dimensional (2D) electronic circuitry results in high power densities during device operation, which could cause a significant temperature rise within 2D channels. One challenge in
Raman thermometry of 2D materials is that the commonly used high-frequency modes do not precisely represent the temperature rise in some 2D materials because of peak broadening and intensity weakening at elevated temperatures. In this work, we show that a low-frequency E2g 2 shear mode can be used to accurately extract temperature and measure thermal boundary conductance (TBC) in backgated tungsten diselenide (WSe2) field-effect transistors, whereas the high-frequency …
Interfacial Thermal Transport In Monolayer Mos2- And Graphene-Based Devices, Zlatan Aksamija, Amin Salehi-Khojin, Cameron J. Foss, Arnab K. Majee, Fatemeh Khalili-Araghi
Jul 2017
Interfacial Thermal Transport In Monolayer Mos2- And Graphene-Based Devices, Zlatan Aksamija, Amin Salehi-Khojin, Cameron J. Foss, Arnab K. Majee, Fatemeh Khalili-Araghi
Zlatan Aksamija
In many device architectures based on 2D materials, a major part of the heat generated in hot-spots dissipates in the through-plane direction where the interfacial thermal resistances can significantly restrain the heat removal
capability of the device. Despite its importance, there is an enormous (1–2 orders of magnitude) disagreement in the literature on the interfacial thermal transport characteristics of MoS2 and other transition metal dichalcogenides (TMDs) (0.1–14 MW m−2 K−1). In this report, the thermal boundary conductance (TBC) across MoS2 and graphene monolayers with SiO2/Si and sapphire substrates is systematically investigated using a
custom-made electrical thermometry platform followed by 3D …
