Open Access. Powered by Scholars. Published by Universities.®

Mechanical Engineering Commons

Open Access. Powered by Scholars. Published by Universities.®

Articles 1 - 2 of 2

Full-Text Articles in Mechanical Engineering

Chemcial Vapor Deposition Precursor Chemistry. 5. The Photolytic Laser Deposition Of Aluminum Thin Films By Chemical Vapor Deposition, John A. Glass, Seong-Don Hwang, Saswati Datta, Brian W. Robertson, James T. Spencer Sep 1996

Chemcial Vapor Deposition Precursor Chemistry. 5. The Photolytic Laser Deposition Of Aluminum Thin Films By Chemical Vapor Deposition, John A. Glass, Seong-Don Hwang, Saswati Datta, Brian W. Robertson, James T. Spencer

Department of Mechanical and Materials Engineering: Faculty Publications

Thin films of very high purity aluminum were formed from the laser photolysis of trimethylamine alane (TMAA) using both ultraviolet (pulsed nitrogen) and visible (argon ion) laser irradiation on a variety of substrates including gold. Si (111), GaAs (110) and Teflon (PTFE). At thicknesses of up to 1 μm, nearly linear growth rates of 377 Ås-1 and 112 Ås-1 were observed. The formation of volatile species formed during the deposition of aluminum from TMAA was investigated by quadrupole mass spectrometry (QMS) of the reactant gas stream. The highest intensity post-deposition mass fragments were observed at m/z 58, …


Microstructure And Deposition Rate Of Aluminum Thin Films From Chemical Vapor Deposition With Dimethylethylamine Alane, Byoung-Youp Kim, Xiaodong Li, Shi-Woo Rhee Jun 1996

Microstructure And Deposition Rate Of Aluminum Thin Films From Chemical Vapor Deposition With Dimethylethylamine Alane, Byoung-Youp Kim, Xiaodong Li, Shi-Woo Rhee

Faculty Publications

Deposition of aluminumfilm from DMEAA in the temperature range of 100–300 °C has been studied. In this temperature range, there is a maximum deposition rate at around 150 °C. The film deposited at 190 °C has elongated blocklike grain shapes, which are ∼600 nm in width and 930 nm in length. Grains in the film deposited at 150 °C showed an equiaxed structure with grain size in the range of 100–300 nm in a film with 600 nm thickness. Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain …