Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 3 of 3
Full-Text Articles in Mechanical Engineering
Characterization Of Sr‐Doped Lamno3 And Lacoo3 As Cathode Materials For A Doped Lagao3 Ceramic Fuel Cell, Kevin Huang, Man Feng, John B. Goodenough, Michael Schmerling
Characterization Of Sr‐Doped Lamno3 And Lacoo3 As Cathode Materials For A Doped Lagao3 Ceramic Fuel Cell, Kevin Huang, Man Feng, John B. Goodenough, Michael Schmerling
Faculty Publications
Energy dispersive spectrometry line scan and ac impedance spectroscopy were used in this study to investigate the chemical reactions between two cathode materials, La0.84Sr0.16MnO3 (LSM), La0.5Sr0.5CoO3-δ (LSC), and the electrolyte La0.9Sr0.1Ga0.8Mg0.2O2.85 (LSGM). Significant interdiffusions of Co into LSGM and Ga into LSC were found at an LSC/LSGM interface even at relatively low fabrication temperatures. In contrast, only small interdiffusions of Mn into LSGM and Ga into LSM were detected at the LSM/LSGM interface even though it was fired at 1470°C. The …
Characterization Of The Si/Sio2 Interface Formed By Remote Plasma Enhanced Chemical Vapor Deposition From Sih4/N2O With Or Without Chlorine Addition, Young-Bae Park, Xiaodong Li, Shi-Woo Rhee
Characterization Of The Si/Sio2 Interface Formed By Remote Plasma Enhanced Chemical Vapor Deposition From Sih4/N2O With Or Without Chlorine Addition, Young-Bae Park, Xiaodong Li, Shi-Woo Rhee
Faculty Publications
The Si/SiO2interface formed by remote plasma enhanced chemical vapor deposition (RPECVD) at low temperature with SiH4/N2O or SiH4/N2O/Cl2 was studied and compared with thermal oxidation. The interface of the CVD SiO2 without chlorine addition is rougher than that with chlorine addition. But the surface roughness of CVD SiO2 films increases with chlorine addition. The thermal oxidation induces strong interface strains, and the strains generated by the CVD SiO2 without chlorine addition are stronger and are distributed more nonuniformly than those by the chlorinated SiO2. …
Microstructure And Deposition Rate Of Aluminum Thin Films From Chemical Vapor Deposition With Dimethylethylamine Alane, Byoung-Youp Kim, Xiaodong Li, Shi-Woo Rhee
Microstructure And Deposition Rate Of Aluminum Thin Films From Chemical Vapor Deposition With Dimethylethylamine Alane, Byoung-Youp Kim, Xiaodong Li, Shi-Woo Rhee
Faculty Publications
Deposition of aluminumfilm from DMEAA in the temperature range of 100–300 °C has been studied. In this temperature range, there is a maximum deposition rate at around 150 °C. The film deposited at 190 °C has elongated blocklike grain shapes, which are ∼600 nm in width and 930 nm in length. Grains in the film deposited at 150 °C showed an equiaxed structure with grain size in the range of 100–300 nm in a film with 600 nm thickness. Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain …