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Full-Text Articles in Engineering Science and Materials
Trifluoroiodomethane As An Environmentally Friendly Gas For Water Patterning By Plasma Etching Process, Krit Aryusook
Trifluoroiodomethane As An Environmentally Friendly Gas For Water Patterning By Plasma Etching Process, Krit Aryusook
Theses
Trifluoroiodomethane (CF3I), a non-global warming gas, has been investigated with study as a substitute for typical CFC etchants, such as CF4 and C2F6, used in wafer pattering technology. This investigation was carried out by exposing dielectric films of silicon oxide (SiO2) and silicon nitride (Si3N4) in CF3I and C2F6/O2 (used as a reference) plasma environments. The etch rate of these films was ascertained as function of applied rf power, etchant gas flow rate, reaction chamber operating pressure, and O2 …
Microporous Silicon Dioxide/Vycor Membranes For Gas Separation, Justin R. Barone
Microporous Silicon Dioxide/Vycor Membranes For Gas Separation, Justin R. Barone
Theses
This study focused on producing membranes for molecular sieving of gases by reducing the pore size of an already existing membrane structure. To do this, SiO2 was deposited inside the pores of a Vycor tube with initial pore diameter of 4 nm. The film deposition took place by a low pressure chemical vapor deposition (LPCVD) process where diethylsilane (DES) and nitrous oxide (N2O) were used as precursor gases. A counterflow reactant geometry was used where the precursor gases were flowed on both sides of the porous membrane. This deposition geometry gave higher selectivities and better mechanical stability. …
Synthesis And Characterization Of Silicon Dioxide Thin Films By Low Pressure Chemical Vapor Deposition, Sutham Niyomwas
Synthesis And Characterization Of Silicon Dioxide Thin Films By Low Pressure Chemical Vapor Deposition, Sutham Niyomwas
Theses
Ditertiarybutylsilane ( DTBS ) and oxygen have been used as precursors to produce silicon dioxide films by low pressure chemical vapor deposition. These films were synthesized in the temperature range of 600°C to 800°C at constant pressure, and at different gas flow composition. The films were found to be uniform with a composition that varied with deposition temperature and gas flow ratio. The growth rate was found to follow an Arrhenius behavior with an apparent activation energy of 2.62 kcal/mol. The growth rate was seen to increase with higher distance between wafers and to vary as a function of square …