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Full-Text Articles in Engineering Science and Materials

Influence Of Flow Rate, Nozzle Speed, Pitch And The Number Of Passes On The Thickness Of S1805 Photoresist In Suss Microtec As8 Spray Coater, Rohan Sanghvi, Gyuseok Kim Oct 2019

Influence Of Flow Rate, Nozzle Speed, Pitch And The Number Of Passes On The Thickness Of S1805 Photoresist In Suss Microtec As8 Spray Coater, Rohan Sanghvi, Gyuseok Kim

Tool Data

S1805 positive photoresist has been deposited on single crystalline Si wafers using a Suss MicroTec Alta Spray. The influence of flow rate, nozzle speed, pitch and number of passes on the thickness of the photoresist was studied. Results show that the thickness of S1805 is linearly proportional to the flow rate and number of passes, and inversely proportional to the nozzle speed and pitch.


Correction Of Pattern Size Deviations In The Fabrication Of Photomasks Made With A Laser Direct-Writer, Ningzhi Xie, George Patrick Watson Oct 2019

Correction Of Pattern Size Deviations In The Fabrication Of Photomasks Made With A Laser Direct-Writer, Ningzhi Xie, George Patrick Watson

Protocols and Reports

When using Heidelberg DWL66+ laser writer to fabricate the photomask, the pattern feature dimensions may have deviations. These deviations can be caused by the lithography process and the undercut in the metal etch process. The same deviation value of 0.8µm was found to appear in all the patterns independent of the pattern original size and local pattern density. To overcome this universal deviation, a universal bias is suggested to be applied to the original patterns during the data preparation for the lithography process. In order to ensure this pre-exposure bias method can work, both the laser direct-write exposure conditions ...


Progress Report I: Fabrication Of Nanopores In Silicon Nitride Membranes Using Self-Assembly Of Ps-B-Pmma, Unnati Joshi, Vishal Venkatesh, Hiromichi Yamamoto Mar 2019

Progress Report I: Fabrication Of Nanopores In Silicon Nitride Membranes Using Self-Assembly Of Ps-B-Pmma, Unnati Joshi, Vishal Venkatesh, Hiromichi Yamamoto

Protocols and Reports

This progress report describes fabrication of silicon nitride membranes from Si wafers using cleanroom techniques, and of nanopore preparation via a self-assembled PS-b-PMMA film. A 36.9 µm thick membrane is successfully prepared by KOH wet etching. The membrane is a layered structure of 36.8 µm thick Si and 116 nm thick silicon nitride. It is also exhibited that in the 47 nm thick PS-b-PMMA film, the nanopore structure is observed in the vicinity of a dust particle, but most of the area indicates lamellar domain structure. The thickness of PS-b-PMMA film will ...