Open Access. Powered by Scholars. Published by Universities.®

Engineering Science and Materials Commons

Open Access. Powered by Scholars. Published by Universities.®

Old Dominion University

Semiconducting indium compounds

Articles 1 - 2 of 2

Full-Text Articles in Engineering Science and Materials

Evolution Of The Band Structure Of Β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content, N. Barreau, S. Marsillac, J. C. Bernède, L. Assmann May 2003

Evolution Of The Band Structure Of Β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content, N. Barreau, S. Marsillac, J. C. Bernède, L. Assmann

Electrical & Computer Engineering Faculty Publications

The evolution of the band structure of β-In2 S3−3x O3x (BISO) thin films grown by physical vapor deposition, with composition x, is investigated using x-ray photoelectron spectroscopy. It is shown that the energy difference between the valence-band level and the Fermi level remains nearly constant as the optical band gap of the films increases. As a consequence, the difference between the conduction band level and the Fermi level increases as much as the optical band gap of the films. The calculation of the electronic affinity [ ] of the BISO thin films shows that it decreases linearly from 4.65 to ...


Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac Jan 2003

Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac

Electrical & Computer Engineering Faculty Publications

γ-In[sub 2]Se[sub 3] thin film are deposited for various substrate temperatures in the range of 523–673 K. This study shows that at 573 and 673 K the thin films are well crystallized with grains aligned along the c axis. Between these temperatures, a domain of instability appears where the γ-In[sub 2]Se[sub 3] thin films have a randomly orientation and the c-lattice parameter increases. The presence of the metastable phase κ-In[sub 2]Se[sub 3], during the growth, can explain the existence of this domain of instability. The insertion of Zn during the ...