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Textured Mos 2 Thin Films Obtained On Tungsten: Electrical Properties Of The W/Mos 2 Contact, E. Gourmelon, J. C. Bernède, J. Pouzet, S. Marsillac

Electrical & Computer Engineering Faculty Publications

Textured films of molybdenum disulfide have been obtained by solid state reaction between the constituents in thin films form when a (200) oriented tungsten sheet is used as substrate. The crystallites have their c axis perpendicular to the plane of the substrate. The annealing conditions are T=1073K and t=30 min. The films are stoichoimetric and p type. Such highly textured films are achieved without foreign atom addition (Ni, Co...). It appears, as shown by x-ray photoelectron spectroscopy, that a thin WS₂ layer is present at the interface W/MoS₂. The crystallization process is discussed by a …