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Engineering Science and Materials Commons

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Full-Text Articles in Engineering Science and Materials

Current-Driven Production Of Vortex-Antivortex Pairs In Planar Josephson Junction Arrays And Phase Cracks In Long-Range Order, Francisco Estellés-Duart, Miguel Ortuño, Andrés M. Somoza, Valerii M. Vinokur, Alex Gurevich Oct 2018

Current-Driven Production Of Vortex-Antivortex Pairs In Planar Josephson Junction Arrays And Phase Cracks In Long-Range Order, Francisco Estellés-Duart, Miguel Ortuño, Andrés M. Somoza, Valerii M. Vinokur, Alex Gurevich

Physics Faculty Publications

Proliferation of topological defects like vortices and dislocations plays a key role in the physics of systems with long-range order, particularly, superconductivity and superfluidity in thin films, plasticity of solids, and melting of atomic monolayers. Topological defects are characterized by their topological charge reflecting fundamental symmetries and conservation laws of the system. Conservation of topological charge manifests itself in extreme stability of static topological defects because destruction of a single defect requires overcoming a huge energy barrier proportional to the system size. However, the stability of driven topological defects remains largely unexplored. Here we address this issue and investigate numerically ...


Complementarities Of Probabilistic And Evidence Approaches: An Uncertainty Assessment For Selection Of Composite Material, Stella B. Bondi, Resit Unal, Patrick T. Hester, Trina M. Chytka Jul 2013

Complementarities Of Probabilistic And Evidence Approaches: An Uncertainty Assessment For Selection Of Composite Material, Stella B. Bondi, Resit Unal, Patrick T. Hester, Trina M. Chytka

Engineering Technology Faculty Publications

A complimentary probabilistic and evidence theory approach is utilized to enhance uncertainty assessments in the area of critical safety characteristics for conceptual design. This research provides additional exploration into the failure modes necessary to utilize Fiber Reinforced Polymer (FRP) and various composites to their fullest potential and to minimize uncertainty by comparing probability and evidence theories. This combined approach has been applied to a selection of composite material that could provide uncertainty assessment design for a space transportation system. Uncertainty estimates presented are bounded by belief and plausibility functions. The results may provide additional information to the decision makers in ...


Electronic And Structural Properties Of Molybdenum Thin Films As Determined By Real Time Spectroscopic Ellipsometry, J. D. Walker, H. Khatri, V. Ranjan, Jian Li, R. W. Collins, S. Marsillac Jan 2009

Electronic And Structural Properties Of Molybdenum Thin Films As Determined By Real Time Spectroscopic Ellipsometry, J. D. Walker, H. Khatri, V. Ranjan, Jian Li, R. W. Collins, S. Marsillac

Electrical & Computer Engineering Faculty Publications

Walker, J.D., Khatri, H., Ranjan, V., Li, J., Collins, R.W., & Marsillac, S. (2009). Electronic and structural properties of molybdenum thin films as determined by real-time spectroscopic ellipsometry. Applied Physics Letters, 94(14). doi: 10.1063/1.3117222


Textured Mos 2 Thin Films Obtained On Tungsten: Electrical Properties Of The W/Mos 2 Contact, E. Gourmelon, J. C. Bernède, J. Pouzet, S. Marsillac Jan 2000

Textured Mos 2 Thin Films Obtained On Tungsten: Electrical Properties Of The W/Mos 2 Contact, E. Gourmelon, J. C. Bernède, J. Pouzet, S. Marsillac

Electrical & Computer Engineering Faculty Publications

Textured films of molybdenum disulfide have been obtained by solid state reaction between the constituents in thin films form when a (200) oriented tungsten sheet is used as substrate. The crystallites have their c axis perpendicular to the plane of the substrate. The annealing conditions are T=1073K and t=30 min. The films are stoichoimetric and p type. Such highly textured films are achieved without foreign atom addition (Ni, Co...). It appears, as shown by x-ray photoelectron spectroscopy, that a thin WS2 layer is present at the interface W/MoS2. The crystallization process is discussed by a ...