Electronic Devices and Semiconductor Manufacturing Commons^™

Novel Memristor Based True Random Number Generator, Scott Stoller

Boise State University Theses and Dissertations

Random numbers are an important, but often overlooked part of the modern computing environment. They are used everywhere around us for a variety of purposes, from simple decision making in video games such as a coin toss, to securing financial transactions and encrypting confidential communications. They are even useful for gambling and the lottery.

Random numbers are generated in many ways. Pseudo random number generators (PRNGs) generate numbers based on a formula. True random number generators (TRNGs) capture entropy from the environment to generate randomness. As our society and our devices become more connected in the digital world, it is …

The Effects Of Radiation On Memristor-Based Electronic Spiking Neural Networks, Sumedha Gandharava Dahl

Boise State University Theses and Dissertations

In this dissertation, memristor-based spiking neural networks (SNNs) are used to analyze the effect of radiation on the spatio-temporal pattern recognition (STPR) capability of the networks. Two-terminal resistive memory devices (memristors) are used as synapses to manipulate conductivity paths in the network. Spike-timing-dependent plasticity (STDP) learning behavior results in pattern learning and is achieved using biphasic shaped pre- and post-synaptic spikes. A TiO₂ based non-linear drift memristor model designed in Verilog-A implements synaptic behavior and is modified to include experimentally observed effects of state-altering, ionizing, and off-state degradation radiation on the device. The impact of neuron “death” (disabled neuron …

Studies On Space Grade Nano-Iconic Radiation Sensors Using Additive Manufacturing Technology, Shah Mohammad Rahmot Ullah

Boise State University Theses and Dissertations

Though Additive manufacturing technology has been developing for 30 years, in recent years, it gets researchers’ and industries’ attention for new expansion in fabricated electronics devices, especially on a flexible substrate. This technology allows fabricating complex design of electronics devices with multi-functionality. Its application has been significantly expanded to different fields such as sensors and other device prototypes for nuclear facilities, aerospace manufacturing, bio-medical, solar energy, etc. due to its low-cost efficiency and sustainable manufacturing. It has a huge advantage over traditional methods such as lower materials waste during production, avoiding complex etching system and harmful chemicals, simplified assembly system …

Low-Cost Test And Characterization Platform For Memristors, Lyle Jones

Boise State University Theses and Dissertations

The electrical Testing and Characterization of the devices built under research conditions on silicon wafers, diced wafers, or package parts have hampered research since the beginning of integrated circuits. The challenges of performing electrical characterization on devices are to acquire useful and accurate data, the ease of use of the test platform, the portability of the test equipment, the ability to automate quickly, to allow modifications to the platform, the ability to change the configuration of the Device Under Test (DUT) or the Memristor Based Design (MBD), and to do this within budget. The devices that this research is focused …

Nano-Ionic Redox Resistive Ram – Device Performance Enhancement Through Materials Engineering, Characterization And Electrical Testing, Muhammad Rizwan Latif

Boise State University Theses and Dissertations

In recent years, Redox Conductive Bridge Memory (RCBM), which falls in the Resistive Random Access Memory (RRAM) category, has gained considerable attention as one of the promising candidates for future generation non-volatile memory due to its advantages over Flash memory as it offers high density, low operating power, fast read/write operation, and compatibility with conventional CMOS process. Currently research is being conducted to improve the reliability of the RCBM devices, which are comprised of an insulating material, also known as active layer, sandwiched between two metal electrodes. The main working mechanism of these devices is based on the resistance change …

Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, And Testing, Mahesh Satyanarayana Ailavajhala

Boise State University Theses and Dissertations

For decades, various radiation-detecting materials have been extensively researched, to find a better material or mechanism. Recently, there has been a growing need for smaller, and more effective materials or devices that are Integrated Circuits (IC) compatible, and can perform similar functions as bulkier Geiger counters, and other measurement options, which fail the requirement for easy, cheap, and accurate radiation dose measurements. Here arises the use of thin films of chalcogenide glasses, which have unique properties of high thermal stability along with high sensitivity towards short wavelength radiation.

In this work, the effect of γ-rays, generated from a ⁶⁰Co …

A Reliability Prediction Method For Phase-Change Devices Using Optimized Pulse Conditions, Martin Jared Barclay

Boise State University Theses and Dissertations

Owing to the outstanding device characteristics of Phase-Change Random Access Memory (PCRAM) such as high scalability, high speed, good cycling endurance, and compatibility with conventional complementary metal-oxide-semiconductor (CMOS) processes, PCRAM has reached the point of volume production. However, due to the temperature dependent nature of the phase-change memory device material and the high electrical and thermal stresses applied during the programming operation, the standard methods of high-temperature (Temperature > 125 °C) accelerated retention testing may not be able to accurately predict bit sensing failures or determine slight pulse condition changes needed if the device were to be …

Cmos Characterization, Modeling, And Circuit Design In The Presence Of Random Local Variation, Benjamin A. Millemon Sr.

Boise State University Theses and Dissertations

Random local variation in CMOS transistors complicates characterization procedures, modeling efforts, simulation tools, and circuit design methodologies in highly scaled CMOS devices. Mismatch is not only a concern for closely matched device pairs in analog circuits; digital circuit designers also have to consider the effects of random variation. Device characterization, modeling, process development, and circuit design engineers have to work together to mitigate the impact of random local variation. This thesis outlines the primary challenges of CMOS characterization, modeling, and circuit design in the presence of random local variation and offers guidelines and solutions to help mitigate and model the …

Investigations Of Conduction Mechanisms Of Ion-Conducting, Bridging Memory Devices (Cbram/Pmc/Ecm), Kyle Bradley Campbell

Boise State University Theses and Dissertations

Electron storage memory devices are approaching the minimum dimensions that are physically possible due to the onward march of Moore’s law. To continue to enable the increased memory densities needed for today’s applications, especially low power and size constrained mobile devices, new memory solutions are needed. Several candidates are emerging in this space. Metal ion-conducting memory devices are being investigated due to excellent scalability, speed, and low power. These devices are part of a memory class called resistive memory. In the literature, they are referred to as CBRAM (conductive bridge random access memory), PMC (programmable metallization cell), ECM (electrochemical metallization …

Design Guide For Cmos Process On-Chip 3d Inductor Using Thru-Wafer Vias, Gary Vanackern

Boise State University Theses and Dissertations

Three-dimensional (3D) inductors using high aspect ratio (10:1) thru-wafer via (TWV) technology in a complementary metal oxide semiconductor (CMOS) process have been designed, fabricated, and measured. The inductors were designed using 500 μm tall vias with the number of turns ranging from 1 to 20 in both a wide and narrow trace width to space ratios. Radio frequency characterization was studied with emphasis upon de-embedding techniques and resulting effects. The open, short, thru de-embedding (OSTD) technique was used to measure all devices. The highest quality factor (Q) measured was 11.25 at 798MHz for a 1-turn device with a self-resonant frequency …

An Investigation Of Carrier Transport In Hafnium Oxide/Silicon Dioxide Mos Gate Dielectric Stacks From 5.6-400k, Richard G. Southwick Iii

Boise State University Theses and Dissertations

Hafnium oxide (HfO₂) is replacing silicon dioxide (SiO₂) as the gate dielectric in metal oxide semiconductor (MOS) structures driven mainly by need to reduce high leakage currents observed in sub-2nm SiO₂. The high dielectric constant of HfO₂ (~25) compared to SiO₂ (3.9 bulk) allows a thicker HfO₂ layer to be used in place of the thinner SiO₂ layer thereby reducing the gate leakage current in MOS devices while maintaining the same capacitive coupling provided by the thinner SiO₂. However, incorporating HfO₂ into MOS devices produces a SiO …