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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Serial And Shuntable Resistance Of Cigs Solar Photo-Electric Module In The Conditions Of Real Solar Lighting At Various Temperatures, Rustam R. Kobulov, Nuriddin A. Matchanov, Omonboy K. Ataboev, Farrukh A. Akbarov
Serial And Shuntable Resistance Of Cigs Solar Photo-Electric Module In The Conditions Of Real Solar Lighting At Various Temperatures, Rustam R. Kobulov, Nuriddin A. Matchanov, Omonboy K. Ataboev, Farrukh A. Akbarov
Euroasian Journal of Semiconductors Science and Engineering
The current-voltage characteristics of the solar photovoltaic module, based on a thin-film polycrystalline semiconductor binary compound Cu(In, Ga)Se2, under real solar illumination (Prad=780 ± 30 W/m2), in the temperature range of 25 °C-50 °C, have been studied and the values of serial and shunt resistance are determined. It has been established that with increasing temperature, the magnitudes of the series and shunting resistance of the solar photovoltaic module decrease, which is most likely due to the modulation of the resistance of the n-CdS buffer front layer.
Serial And Shuntable Resistance Of Cigs Solar Photo-Electric Module In The Conditions Of Real Solar Lighting At Various Temperatures, Rustam R. Kobulov, Nuriddin A. Matchanov, Omonboy K. Ataboev, Farrukh A. Akbarov
Serial And Shuntable Resistance Of Cigs Solar Photo-Electric Module In The Conditions Of Real Solar Lighting At Various Temperatures, Rustam R. Kobulov, Nuriddin A. Matchanov, Omonboy K. Ataboev, Farrukh A. Akbarov
Euroasian Journal of Semiconductors Science and Engineering
The current-voltage characteristics of the solar photovoltaic module, based on a thin-film polycrystalline semiconductor binary compound Cu(In, Ga)Se2, under real solar illumination (Prad=780 ± 30 W/m2), in the temperature range of 25 °C-50 °C, have been studied and the values of serial and shunt resistance are determined. It has been established that with increasing temperature, the magnitudes of the series and shunting resistance of the solar photovoltaic module decrease, which is most likely due to the modulation of the resistance of the n-CdS buffer front layer.