Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 1 of 1
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Model Development And Assessment Of The Gate Network In A High-Performance Sic Power Module, William Austin Curbow
Model Development And Assessment Of The Gate Network In A High-Performance Sic Power Module, William Austin Curbow
Graduate Theses and Dissertations
The main objective of this effort is to determine points of weakness in the gate network of a high-performance SiC power module and to offer remedies to these issues to increase the overall performance, robustness, and reliability of the technology. In order to accomplish this goal, a highly accurate model of the gate network is developed through three methods of parameter extraction: calculation, simulation, and measurement. A SPICE model of the gate network is developed to analyze four electrical issues in a high-speed, SiC-based power module including the necessary internal gate resistance for damping under-voltage and over-voltage transients, the disparity …