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Articles 1 - 13 of 13
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Enercon Station Vacuum Pump Replacement, Clint Hembree, Jared D'Amico, Connor Moore, Paul Jeffrey Fontenot, Sydnee Castello, J.J. Clements
Enercon Station Vacuum Pump Replacement, Clint Hembree, Jared D'Amico, Connor Moore, Paul Jeffrey Fontenot, Sydnee Castello, J.J. Clements
Senior Design Project For Engineers
This details the progress of the ENERCON pump replacement project as completed by the Kennesaw State University interdisciplinary senior design group. This project is a two-semester capstone effort for the engineering program at Southern Polytechnic School of Engineering, overseen by Dr. McFall during Fall 2020 and Dr. Khalid during Spring 2021 semesters. The 2020-2021 KSU Interdisciplinary Senior Design team was tasked with completing an Engineering Change Package (ECP) for existing vacuum pumps at ENERCON Station. The mechanical, electrical, and civil students worked together, performing evaluations on existing plant systems to ensure the plant could support the new vacuum pumps. By …
Exploration Of Radiation Damage Mechanism In Mems Devices., Pranoy Deb Shuvra
Exploration Of Radiation Damage Mechanism In Mems Devices., Pranoy Deb Shuvra
Electronic Theses and Dissertations
We explored UV, X-ray and proton radiation damage mechanisms in MEMS resonators. T-shaped MEMS resonators of different dimensions were used to investigate the effect of radiation. Radiation damage is observed in the form of resistance and resonance frequency shift of the device. The resistance change indicates a change in free carrier concentration and mobility, while the resonance frequency change indicates a change in mass and/or elastic constant. For 255nm UV radiation, we observed a persistent photoconductivity that lasts for about 60 hours after radiation is turned off. The resonance frequency also decreases 40-90 ppm during irradiation and slowly recovers at …
Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson
Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson
Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research
Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon …
An Exact Analysis For Four-Order Acousto-Optic Bragg Diffraction Which Incorporates Both Incident Light Angle And Sound Frequency Dependencies, Adeyinka Sunday Ademola
An Exact Analysis For Four-Order Acousto-Optic Bragg Diffraction Which Incorporates Both Incident Light Angle And Sound Frequency Dependencies, Adeyinka Sunday Ademola
Electrical Engineering Theses
This thesis extends the prior work which produced an exact solution to the four-order acousto-optic (AO) Bragg cell with assumed fixed center frequency and with exact Bragg angle incident light. The extension predicts the model that incorporates the dependencies of both the input angle of light and the sound frequency. Specifically, a generalized 4th order linear differential equation (DE), is developed from a simultaneous analysis of four coupled AO system of DEs. Through standard methods, the characteristic roots, which requires solving a quartic equation, is produced. Subsequently, a derived system of homogeneous solutions, which absorbs the roots obtained using …
Measurement And Analysis Of Iii-V & Ii-Vi Infrared Detectors: Radiometric, Noise Spectrum, And Radiation Tolerance Performance, Vincent M. Cowan
Measurement And Analysis Of Iii-V & Ii-Vi Infrared Detectors: Radiometric, Noise Spectrum, And Radiation Tolerance Performance, Vincent M. Cowan
Nanoscience and Microsystems ETDs
Infrared (IR) hybrid detector arrays and discrete detectors operated in the space environment may be subjected to a variety of sources of natural radiation while in orbit. This means IR detectors intended for applications such as space-based intelligence, surveillance, and reconnaissance (ISR) or space-situational awareness (SSA) must not only have high performance (high quantum efficiency, h and low dark-current density, JD, and preferably minimal 1/f noise content), but also their radiation tolerance or ability to withstand the effects of the radiation they would expect to encounter in space must be characterized and well understood. As the effects of …
Neutron Radiation Effects On Ge And Gesn Semiconductors, Christopher T. O'Daniel
Neutron Radiation Effects On Ge And Gesn Semiconductors, Christopher T. O'Daniel
Theses and Dissertations
Two different semiconductor materials received neutron radiation for assessment of radiation damage. The two materials are undoped bulk Ge and epitaxial Ge0.991Sn0.009, which is doped heavily with phosphorous. At room temperature, the Ge sample has direct and indirect bandgaps at 0.78 eV and 0.66 eV, respectively. The Ge0.991Sn0.009 sample has direct and indirect bandgaps at 0.72 eV and 0.63 eV, respectively. Two samples of each material were exposed to research reactor neutrons, delivering a 1 MeV equivalent neutron fluence of 2.52 × 1015 n/cm2. In order to assess the radiation …
Low Pressure Chemical Vapor Deposition Of Semiconducting Boron Carbide Thin Films On Silicon, Thomas Gregory Wulz
Low Pressure Chemical Vapor Deposition Of Semiconducting Boron Carbide Thin Films On Silicon, Thomas Gregory Wulz
Masters Theses
Boron carbide thin films were grown on the (100) plane of n-type silicon in a low pressure chemical vapor deposition (CVD) system from the thermal decomposition of boron trichloride and methane reactant gases with hydrogen as a carrier gas. Boron trichloride to methane molar ratio was 5, while the boron trichloride to hydrogen molar ratio was 3.5. Thin film deposition was carried out at 900 degrees Celsius at 25 Torr. The thin films were analyzed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Energy Dispersive X-Ray Spectroscopy (EDS), Laser Induced Breakdown Spectroscopy (LIBS), and current-voltage characteristics. The crystallography of …
Wireless Transmission Network : A Imagine, Radhey Shyam Meena Engineer, Neeraj Kumar Garg Asst.Prof
Wireless Transmission Network : A Imagine, Radhey Shyam Meena Engineer, Neeraj Kumar Garg Asst.Prof
Radhey Shyam Meena
World cannot be imagined without electrical power. Generally the power is transmitted through transmission networks. This paper describes an original idea to eradicate the hazardous usage of electrical wires which involve lot of confusion in particularly organizing them. Imagine a future in which wireless power transfer is feasible: cell phones, household robots, mp3 players, laptop computers and other portable electronic devices capable of charging themselves without ever being plugged in freeing us from that final ubiquitous power wire. This paper includes the techniques of transmitting power without using wires with an efficiency of about 95% with non-radioactivemethods. In this paper …
Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er., Deepa Sharma
Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er., Deepa Sharma
Radhey Shyam Meena
Grid-connected solar PV dramatically changes the load profile of an electric utility customer. The expected widespread adoption of solar generation by customers on the distribution system poses significant challenges to system operators both in transient and steady state operation, from issues including voltage swings, sudden weather-induced changes in generation, and legacy protective devices designed with one-way power flow in mind
Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er.
Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er.
Radhey Shyam Meena
As solar photovoltaic power generation becomes more commonplace, the inherent intermittency of the solar resource poses one of the great challenges to those who would design and implement the next generation smart grid. Specifically, grid-tied solar power generation is a distributed resource whose output can change extremely rapidly, resulting in many issues for the distribution system operator with a large quantity of installed photovoltaic devices. Battery energy storage systems are increasingly being used to help integrate solar power into the grid. These systems are capable of absorbing and delivering both real and reactive power with sub-second response times. With these …
Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er.
Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er.
Radhey Shyam Meena
Switchyard Provides the facilities for switching ,protection & Control of electric power. To handle high Voltage power with proper Safety measures. To isolate the noises coming from the grid with true 50Hz power SWITCH YARD IS IMPORTANT PART IN THERMAL PLANT. IN KALISINDH THERMAL 400KV AND 220KV SWITCH YARD LOCATED.
Total Dose Effects Of Ionizing And Non-Ionizing Radiation On Piezoresistive Pressure Transducer Chips, Samuel J. Willmon
Total Dose Effects Of Ionizing And Non-Ionizing Radiation On Piezoresistive Pressure Transducer Chips, Samuel J. Willmon
Theses and Dissertations
The effects of ionizing and non ionizing radiation on the resistivity of silicon based, piezoresistive bulk micro-machined chips from pressure transducers were examined. Standard current-voltage (I-V) measurements were taken in-situ and post-irradiation during isothermal annealing at room temperature. One group of chips was irradiated to a maximum total gamma dose of lMrad(Si) in the 11,000 Ci (60) Co gamma cell at Ohio State University. The second group of chips was irradiated at the Ohio State University Research Reactor facility to a maximum total neutron dose of 4 Mrad(Si) using beam port Hi. The resistivity was shown to decrease during gamma …
Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul
Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul
Theses and Dissertations
Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide (RNO) MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a 60Co source, up to 1 Mrad(Si) at a dose rate of 107 rads(Si)-sec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of …