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Physical Sciences and Mathematics

Nancy A. Burnham

Electron beams

Publication Year

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Full-Text Articles in Biomedical Engineering and Bioengineering

Electron Beam Effects In The Analysis Of Compound Semiconductors And Devices, Nancy Burnham, Ll Kazmerski, Ab Swartzlander, Aj Nelson, Se Asher Aug 1987

Electron Beam Effects In The Analysis Of Compound Semiconductors And Devices, Nancy Burnham, Ll Kazmerski, Ab Swartzlander, Aj Nelson, Se Asher

Nancy A. Burnham

The effects of electron beams on the analysis of CuInSe2surfaces are examined in this paper. Potential changes in the surface chemistry—including oxidation and desorption—under a range of incident probe conditions, are investigated for possible artifactual information generation. Emphasis is placed on the relationships between beam conditions and oxygen chemisorption and physisorption, since oxygen treatments of devices utilizing this semiconductor are critical to performance. Single crystals and polycrystalline thin films are analyzed and compared to establish the beam‐induced phenomena.


Scanning Auger Microprobe Studies Of Ball Cratered Cds/Cuinse2 Solar Cells, Nancy Burnham, Ll Levenson, Rj Matson, R Noufi, Ll Kazmerski Apr 1986

Scanning Auger Microprobe Studies Of Ball Cratered Cds/Cuinse2 Solar Cells, Nancy Burnham, Ll Levenson, Rj Matson, R Noufi, Ll Kazmerski

Nancy A. Burnham

CdS/CuInSe2solar cell films are typically several micrometers thick. Composition profiles of these films are usually carried out on fracture cross sections by scanning Auger microscopy or by recording Auger spectra during ion milling. For fracture cross sections, the depth resolution depends on the electron beam diameter and the roughness of the fracture surface. Ion milling is time consuming, and artifacts are caused by ion beam faceting. Ball cratering requires only a fraction of an hour and provides significant magnification of the film cross section. There is sufficient contrast, both in optical and electron microscopy, to distinguish between CdS and ...