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Characterization Of High Temperature Optocoupler For Power Electronic Systems, David Gonzalez
Characterization Of High Temperature Optocoupler For Power Electronic Systems, David Gonzalez
Electrical Engineering Undergraduate Honors Theses
High-temperature devices have been rapidly increas due to the implementation of new technologies like silicon carbide, high-temperature ceramic, and others. Functionality under elevated temperatures can reduce signal integrity reducing the reliability of power electronic systems. This study presents an ongoing research effort to develop a high-temperature package for optocouplers to operate at higher temperature compared with commercial devices. Low temperature co-fired ceramic (LTCC) was used as the substrate. Bare die commercial LED and photodetectors were attached to the substrate and tested for functionality. Preliminary results show enhanced performance at elevated temperatures compared to a commercial optocoupler device.
Ac Direct Drive Led Lighting Using Low Cost Analog Components, Miles Head
Ac Direct Drive Led Lighting Using Low Cost Analog Components, Miles Head
Master's Theses
This project explores the rapidly expanding area of AC direct drive for LED lighting. AC LED driving does not use typical DC-DC converter-based driving but uses semiconductor switches and a linear regulator to activate a number of LEDs proportional to the input voltage at any given time. This allows bulky, expensive magnetics to be eliminated from the system. The goal of this project was to design a scaled-down physical AC LED direct drive system to validate the conclusions of methods for improving efficiency from a previous investigation that found minimizing voltage across the linear regulating MOSFET led to higher efficiency …
Displacement Damage Effects In Gesn Light Emitting Diodes, Kevin K. Choe
Displacement Damage Effects In Gesn Light Emitting Diodes, Kevin K. Choe
Theses and Dissertations
Potential future use on Earth-orbiting satellites calls for investigation into the suitability of GeSn based photonic devices in high energy proton environments. The electroluminescence (EL) intensity of Ge1-xSnx (x = 0, 0.02, 0.069, and 0.094) light emitting diodes was measured before and after irradiation by 2 MeV protons at relatively high fluence levels. The results showed that GeSn devices with higher Sn content were up to 10 times more resistant against proton displacement damage than the pure Ge (x = 0) devices. As Sn concentration increased, the band gap decreased, and V-P hole trap energy level moved further from the …