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2002

University of South Carolina

Articles 1 - 30 of 38

Full-Text Articles in Engineering

Milliwatt Power Deep Ultraviolet Light-Emitting Diodes Over Sapphire With Emission At 278 Nm, J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, Grigory Simin, J. W. Yang, M. Asif Khan Dec 2002

Milliwatt Power Deep Ultraviolet Light-Emitting Diodes Over Sapphire With Emission At 278 Nm, J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, Grigory Simin, J. W. Yang, M. Asif Khan

Faculty Publications

We report on AlGaN multiple-quantum-well (MQW)-based deep ultraviolet light-emitting diodes over sapphire with peak emission at 278 nm. A new buffer layer growth process was used to reduce the number of defects and hence the nonradiative recombination. The improved material quality and carrier confinement resulted in pulsed powers as high as 3 mW at 278 nm and a significantly reduced deep-level-assisted long-wavelength emission.

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Polarization Effects In Photoluminescence Of C- And M-Plane Gan/Algan Multiple Quantum Wells, E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, Grigory Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, B. Chai Nov 2002

Polarization Effects In Photoluminescence Of C- And M-Plane Gan/Algan Multiple Quantum Wells, E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, Grigory Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, B. Chai

Faculty Publications

Polarizationeffects have been studied in GaN/AlGaN multiple quantum wells(MQWs) with different c-axis orientation by means of excitation-dependent photoluminescence(PL) analysis. Quantum structures were grown on [0001]-oriented sapphire substrates (C plane) and single-crystalline [11̄00]-oriented freestanding GaN (M plane) using the metalorganic chemical vapor deposition technique. Strong PL spectrum line blueshifts (up to 140 meV) which are correlated with the excitation intensity have been obtained for C-plane MQWs, whereas no shift has been observed for M-plane MQWs.Theoretical calculations and comparison with the PL data confirm that the built-in electric field for C-plane structures is much stronger than the field present for M-plane MQWs. …

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Distributions Of Noble Metal Pd And Pt In Mesoporous Silica, J. Arbiol, A. Cabot, J. R. Morante, Fanglin Chen, Meilin Liu Oct 2002

Distributions Of Noble Metal Pd And Pt In Mesoporous Silica, J. Arbiol, A. Cabot, J. R. Morante, Fanglin Chen, Meilin Liu

Faculty Publications

Mesoporous silica nanostructures have been synthesized and loaded with Pd and Pt catalytic noble metals. It is found that Pd forms small nanoclusters (3–5 nm) on the surface of the mesoporous structure whereas Pt impregnation results in the inclusion of Pt nanostructures within the silica hexagonal pores (from nanoclusters to nanowires). It is observed that these materials have high catalytic properties for CO–CH4 combustion, even in a thick film form. In particular, results indicate that the Pt and Pd dispersed in mesoporous silica are catalytically active as a selective filter for gas sensors.

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Distributions Of Nobel Metal Pd And Pt In Mesoporous Silica, J. Arbiol, A. Cabot, J. R. Morante, Fanglin Chen, Meilin Liu Oct 2002

Distributions Of Nobel Metal Pd And Pt In Mesoporous Silica, J. Arbiol, A. Cabot, J. R. Morante, Fanglin Chen, Meilin Liu

Faculty Publications

Mesoporous silicananostructures have been synthesized and loaded with Pd and Pt catalytic noble metals. It is found that Pd forms small nanoclusters (3–5 nm) on the surface of the mesoporous structure whereas Pt impregnation results in the inclusion of Pt nanostructures within the silica hexagonal pores (from nanoclusters to nanowires). It is observed that these materials have high catalyticproperties for CO–CH4CO–CH4CO–CH4 combustion, even in a thick film form. In particular, results indicate that the Pt and Pd dispersed in mesoporous silica are catalytically active as a selective filter for gas sensors.

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Gan Homoepitaxy On Freestanding (11̄00) Oriented Gan Substrates, C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, Grigory Simin, M. A. Khan, Herbert-Paul Maruska, David W. Hill, Mitch M. C. Chou, Bruce Chai Oct 2002

Gan Homoepitaxy On Freestanding (11̄00) Oriented Gan Substrates, C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, Grigory Simin, M. A. Khan, Herbert-Paul Maruska, David W. Hill, Mitch M. C. Chou, Bruce Chai

Faculty Publications

We report homoepitaxialGaNgrowth on freestanding (11̄00) oriented (M-plane GaN) substrates using low-pressure metalorganic chemical vapor deposition.Scanning electron microscopy,atomic-force microscopy, and photoluminescence were used to study the influence of growth conditions such as the V/III molar ratio and temperature on the surface morphology and optical properties of the epilayers. Optimized growth conditions led to high quality (11̄00) oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Since for III-N materials the (11̄00) crystal orientation is free from piezoelectric or spontaneous polarization electric fields, …

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Low-Temperature Operation Of Alfan Single-Quantum-Well Light-Emitting Diodes With Deep Ultraviolet Emission At 285 Nm, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan Oct 2002

Low-Temperature Operation Of Alfan Single-Quantum-Well Light-Emitting Diodes With Deep Ultraviolet Emission At 285 Nm, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan

Faculty Publications

We present a study of the electrical and optical characteristics of 285 nm emission deep ultraviolet light-emitting diodes(LED) at temperatures from 10 to 300 K. At low bias, our data show the tunneling carrier transport to be the dominant conduction mechanism. The room-temperature performance is shown to be limited mostly by poor electron confinement in the active region and a pronounced deep level assisted recombination but not by the hole injection into the active region. At temperatures below 100 K, the electroluminescence peak intensity increases by more than one order of magnitude indicating that with a proper device design and …

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Near-Band-Edge Photoluminescence Of Wurtzite-Type Aln, E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur, C. Rojo, L. Schowalter Sep 2002

Near-Band-Edge Photoluminescence Of Wurtzite-Type Aln, E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur, C. Rojo, L. Schowalter

Faculty Publications

Temperature-dependentphotoluminescence(PL)measurements were performed for A-plane and C-plane bulk AlN single crystals and epitaxial layers on sapphire. A strong near-band-edge (NBE) emission and deep-level luminescence were observed. At low excitations, the emission spectra are dominated by free and bound excitonic transitions and their LO-phonon replicas. At high excitations, the broadening and redshift of the NBE band is attributed to dense electron–hole plasma formation. The PL spectra differences of bulk single crystals and epilayers is explained by the electron–hole plasma expansion peculiarities.

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Low-Loss High Power Rf Switching Using Multifinger Algan/Gan Moshfets, Alexei Koudymov, Xuhong Hu, Kirill Simin, Grigory Simin, Mohammod Ali, Jinwei Yang, M. Asif Khan Aug 2002

Low-Loss High Power Rf Switching Using Multifinger Algan/Gan Moshfets, Alexei Koudymov, Xuhong Hu, Kirill Simin, Grigory Simin, Mohammod Ali, Jinwei Yang, M. Asif Khan

Faculty Publications

We demonstrate a novel RF switch based on a multifinger AlGan/GaN MOSHFET. Record high saturation current and breakdown voltage, extremely low gate leakage current and low gate capacitance of the III-N MOSHFETs make them excellent active elements for RF switching. Using a single element test circuit with 1-mm wide multifinger MOSHFET we achieved 0.27 dB insertion loss and more than 40 dB isolation. These parameters can be further improved by impedance matching and by using submicron gate devices. The maximum switching power extrapolated from the results for 1a/mm 100 mum wide device exceeds 40 W for a 1-mm wide 2-a/mm …

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Nonresonant Detection Of Terahertz Radiation In Field Effect Transistors, W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, Grigory Simin, X. Hu, M. Asif Khan, C. A. Saylor, L. C. Brunel Jun 2002

Nonresonant Detection Of Terahertz Radiation In Field Effect Transistors, W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, Grigory Simin, X. Hu, M. Asif Khan, C. A. Saylor, L. C. Brunel

Faculty Publications

We present an experimental and theoretical study of nonresonant detection of subterahertz radiation in GaAs/AlGaAs and GaN/AlGaN heterostructurefield effect transistors. The experiments were performed in a wide range of temperatures (8–300 K) and for frequencies ranging from 100 to 600 GHz. The photoresponse measured as a function of the gate voltage exhibited a maximum near the threshold voltage. The results were interpreted using a theoretical model that shows that the maximum in photoresponse can be explained by the combined effect of exponential decrease of the electron density and the gate leakage current.

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Dynamic Multiphysics Model For Solar Array, Shengyi Liu, Roger A. Dougal Jun 2002

Dynamic Multiphysics Model For Solar Array, Shengyi Liu, Roger A. Dougal

Faculty Publications

An approach to model the solar cell system with coupled multiphysics equations (photovoltaic, electro-thermal, direct heating and cooling processes) within the context of the resistive-companion method in the Virtual Test Bed computational environment is presented. Appropriate across and through variables are defined for the thermal terminal of the system so that temperature is properly represented as a state variable, rather than as a parameter of the system. This allows enforcement of the system power conservation through all terminals, and allows simultaneous solutions for both the electrical potentials and the system temperature. The thermal port built accordingly can be used for …

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On Localized Control In Qos Routing, Srihari Nelakuditi, Srivatsan Varadarajan, Zhi-Li Zhang Jun 2002

On Localized Control In Qos Routing, Srihari Nelakuditi, Srivatsan Varadarajan, Zhi-Li Zhang

Faculty Publications

In this note, we study several issues in the design of localized quality-of-service (QoS) routing schemes that make routing decisions based on locally collected QoS state information (i.e., there is no network-wide information exchange among routers). In particular, we investigate the granularity of local QoS state information and its impact on the design of localized QoS routing schemes from a theoretical perspective. We develop two theoretical models for studying localized proportional routing: one using the link-level information and the other using path-level information. We compare the performance of these localized proportional routing models with that of a global optimal proportional …

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A Localized Adaptive Proportioning Approach To Qos Routing, Srihari Nelakuditi, Zhi-Li Zhang Jun 2002

A Localized Adaptive Proportioning Approach To Qos Routing, Srihari Nelakuditi, Zhi-Li Zhang

Faculty Publications

In QoS routing, paths for flows are selected based on knowledge of resource availability at network nodes and the QoS requirements of flows. Several QoS routing schemes have been proposed that differ in the way they gather information about the network state and select paths based on this information. We broadly categorize these schemes into best path routing and proportional routing. The best path routing schemes gather global network state information and always select the best path for an incoming I-low,based on this global view. It has been shown that best path routing schemes require frequent exchange of network state, …

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Time-Resolved Photoluminescence Of Quaternary Alingan-Based Multiple Quantum Wells, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, G. G. Sim, P. W. Yu May 2002

Time-Resolved Photoluminescence Of Quaternary Alingan-Based Multiple Quantum Wells, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, G. G. Sim, P. W. Yu

Faculty Publications

Time-resolvedphotoluminescence(PL)dynamics has been studied in AlInGaN/AlInGaN multiple quantum wells(MQWs) grown by a pulsed metalorganic chemical vapor deposition (PMOCVD) procedure. The PL decay kinetics was found to be sensitive to the emission energy and temperature. The PL decay time increases with decreasing emission energy, which is a characteristic of localized carrier/exciton recombination due to alloy fluctuations. Its temperature dependence shows radiative recombination to be the dominant process at low temperatures, indicating a high quality of PMOCVD grown quaternary AlInGaN MQWs and establishing them as promising structures for the active region of deep ultraviolet light emitting diodes.

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Luminescence Mechanisms In Quaternary AlXInYGa1-X-YN Materials, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan May 2002

Luminescence Mechanisms In Quaternary AlXInYGa1-X-YN Materials, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan

Faculty Publications

Low-temperature photoluminescence investigations have been carried out in the quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by pulsedmetalorganic chemical-vapor deposition (PMOCVD). With increasing excitation power density, the emission peaks in both AlInGaN epilayers and MQWs show a strong blueshift and theirlinewidths increase. The luminescence of the samples grown by PMOCVD is attributed to recombination of carriers/excitons localized at band-tail states. We also demonstrate theluminescence properties of AlInGaN and AlGaN materials grown by a pulsed atomic-layerepitaxy and conventional MOCVD, respectively.

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Nanofatigue Studies Of Ultrathin Hard Carbon Overcoats Used In Magnetic Storage Devices, Xiaodong Li, Bharat Bhushan May 2002

Nanofatigue Studies Of Ultrathin Hard Carbon Overcoats Used In Magnetic Storage Devices, Xiaodong Li, Bharat Bhushan

Faculty Publications

A technique to perform nanofatigue experiments was developed. This technique utilizes a depth-sensing nanoindenter with harmonic force. The nanofatigue behavior of 20 nm thick amorphous carbon coatings was studied. The contact stiffness was monitored continuously throughout the test. The abrupt decrease in the contact stiffness indicates fatigue damage has occurred. The critical load amplitude, below which no fatigue damage occurs, was identified. It was found that the filtered cathodic arc coating exhibits longer fatigue life than a direct ion beam coating. Failure mechanisms of the coatings during fatigue are also discussed in conjunction with the hardness,elastic modulus, and fracture toughness, …

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Crack-Free Thick Algan Grown On Sapphire Using Aln/Algan Superlattices For Strain Management, J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan May 2002

Crack-Free Thick Algan Grown On Sapphire Using Aln/Algan Superlattices For Strain Management, J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan

Faculty Publications

We report on an AlN/AlGaN superlattice approach to grow high-Al-content thick n+-AlGaNlayers over c-plane sapphire substrates. Insertion of a set of AlN/AlGaN superlattices is shown to significantly reduce the biaxial tensile strain, thereby resulting in 3-μm-thick, crack-free Al0.2Ga0.8N layers. These high-quality, low-sheet-resistive layers are of key importance to avoid current crowding in quaternary AlInGaN multiple-quantum-well deep-ultraviolet light-emitting diodes over sapphire substrates.

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Maximum Current In Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska Apr 2002

Maximum Current In Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska

Faculty Publications

We present experimental and modeling results on the gate-length dependence of the maximum current that can be achieved in GaN-based heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs). Our results show that the factor limiting the maximum current in the HFETs is the forward gate leakage current. In the MOSHFETs, the gate leakage current is suppressed and the overflow of the two dimensional electron gas into the AlGaN barrier region becomes the most important factor limiting the maximum current. Therefore, the maximum current is substantially higher in MOSHFETs than in HFETs. The measured maximum current increases with a decrease in the gate …

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Two Mechanisms Of Blueshift Of Edge Emission In Ingan-Based Epilayers And Multiple Quantum Wells, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur Feb 2002

Two Mechanisms Of Blueshift Of Edge Emission In Ingan-Based Epilayers And Multiple Quantum Wells, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

We present the results of a comparative photoluminescence(PL) study of GaN and InGaN-based epilayers, and InGaN/GaN multiple quantum wells(MQWs). Room-temperature PL spectra were measured for a very broad range of optical excitation from 10 mW/cm2 up to 1 MW/cm2. In contrast to GaN epilayers, all In-containing samples exhibited an excitation-induced blueshift of the peak emission. In addition, the blueshift of the emission in the InGaN epilayers with the same composition as the quantum well was significantly smaller. The comparison of the blueshift in the “bulk” InGaN and in the MQWs allowed us to separate two different mechanisms …

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Electrochemical Filtering Of Co From Fuel-Cell Reformate, Balasubramanian Lakshmanan, Wayne Huang, John W. Weidner Jan 2002

Electrochemical Filtering Of Co From Fuel-Cell Reformate, Balasubramanian Lakshmanan, Wayne Huang, John W. Weidner

Faculty Publications

A proton exchange membrane fuel cell was used as a flow reactor for continuous preferential oxidation of CO over H2 from 1.0% CO in H2 under pulse-potential control. By varying the pulse profile ~e.g., on-time, off-time, pulse potential! the CO and H2 oxidation currents were varied independently. The improvement in faradaic selectivity between CO and H2 oxidation results from the promotion of CO adsorption during the off ~i.e., open-circuit! portion of the pulse. Therefore, during the on portion CO oxidation was preferred while the surface was covered with CO.

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Effect Of Residual Thermal Stresses On Fracture Behavior And Mechanical Properties Of Al Sub 2 O Sub 3/Ni Cermets, Guo Jin Li, Da Ming Chen, Xiao Xian Huang, Jing Kun Guo Jan 2002

Effect Of Residual Thermal Stresses On Fracture Behavior And Mechanical Properties Of Al Sub 2 O Sub 3/Ni Cermets, Guo Jin Li, Da Ming Chen, Xiao Xian Huang, Jing Kun Guo

Faculty Publications

Effect of residual thermal stresses on fracture behavior and mechanical properties of Al2O3/Ni cermets was qualitatively explained by using theory on residual thermal stresses. When Ni particles are located within Al2O3 grains or Ni content is relatively low, tensile stresses are exerted at Al2O3-Al2O3 grain boundary. While fracturing, intergranular fracture is easily produced. When Ni particles are dispersed at Al2O3 grain boundary or Ni content is relatively high, compressive stresses are exerted at Al2O3-Al2O3grain boundary. …

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Trusted Autonomy, Michael N. Huhns, Duncan A. Buell Jan 2002

Trusted Autonomy, Michael N. Huhns, Duncan A. Buell

Faculty Publications

We describe how agents are the right building blocks for constructing trustworthy systems. Robust software and trusted autonomy represent the future for agent technology and software engineering.

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Robust Software, Michael N. Huhns, Vance T. Holderfield Jan 2002

Robust Software, Michael N. Huhns, Vance T. Holderfield

Faculty Publications

Agents offer a convenient level of granularity at which to add redundancy a key factor in developing robust software. Blindly adding code introduces more errors, makes the system more complex, and renders it harder to understand. However, adding more code can make software better, if it is added in the right way. As this article describes, the key concepts appear to be redundancy and the appropriate granularity.

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Weaving A Computing Fabric, Michael N. Huhns, Larry M. Stevens, John W. Keele, Jim E. Wray, Warren M. Snelling, Greg P. Harhay, Randy R. Bradley Jan 2002

Weaving A Computing Fabric, Michael N. Huhns, Larry M. Stevens, John W. Keele, Jim E. Wray, Warren M. Snelling, Greg P. Harhay, Randy R. Bradley

Faculty Publications

As sources of information relevant to a particular domain proliferate, we need a methodology for locating, aggregating, relating, fusing, reconciling, and presenting information to users. Interoperability thus must occur not only among the information, but also among the different software applications that process it. Given the large number of potential sources and applications, interoperability becomes an extremely large problem for which manual solutions are impractical. A combination of software agents and ontologies can supply the necessary methodology for interoperability.

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Making Agents Secure On The Semantic Web, Csilla Farkas, Michael N. Huhns Jan 2002

Making Agents Secure On The Semantic Web, Csilla Farkas, Michael N. Huhns

Faculty Publications

Agents were designed to collaborate and share information. While highly desirable for interoperability, this feature is scary from the security perspective. Illegal inferences, supported by semantic Web technology and ontologies, might enable users to access unauthorized information. In addition to semantic associations and replicated data with different sensitivity, malicious agents could also exploit statistical inferences. Although each agent in a system might behave in a desired and secure way, their combined knowledge could be used to disclose sensitive data. The research community must therefore develop and implement techniques that allow control over released data. To answer the questions related to …

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Agents As Web Services, Michael N. Huhns Jan 2002

Agents As Web Services, Michael N. Huhns

Faculty Publications

Web services are extremely flexible. Most advantageously, a developer of Web services need not know who or what will use the services being provided. The paper discusses current standards for Web services, directory services and the Semantic Web. It considers how agents extend Web services in several important ways.

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Agent Societies: Magnitude And Duration, Michael N. Huhns Jan 2002

Agent Societies: Magnitude And Duration, Michael N. Huhns

Faculty Publications

If you only need agents to search the Web for cheap CDs, scalability is not an issue. The Web can support numerous agents if each acts independently. In short order, however, billions of embedded agents that sense their environment and interact with us and other agents will fill our world, making the human environment friendlier and more efficient. These agents will need not only scalable infrastructures and communication services, but also scalable social services encompassing ethics and laws. Research projects are under way around the world to develop and deploy such services. The author takes a look at the critical …

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Simulating Shape Changes During Electrodeposition: Primary And Secondary Current Distribution, Venkat R. Subramanian, Ralph E. White Jan 2002

Simulating Shape Changes During Electrodeposition: Primary And Secondary Current Distribution, Venkat R. Subramanian, Ralph E. White

Faculty Publications

A technique based on the analytical method of lines is presented for predicting shape changes during electrodeposition. The technique is presented for both primary and secondary current distributions. The method presented does not require iterations for nonlinear Butler-Volmer boundary conditions or changing electrode shapes. The technique is based on a semianalytical method developed earlier for predicting current distributions in electrochemical cells. This technique is attractive because it provides a symbolic solution for the Laplace equation, and hence requires less computation time to perform case studies.

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Modeling The Effects Of Electrode Composition And Pore Structure On The Performance Of Electrochemical Capacitors, Changqing Lin, Branko N. Popov, Harry J. Ploehn Jan 2002

Modeling The Effects Of Electrode Composition And Pore Structure On The Performance Of Electrochemical Capacitors, Changqing Lin, Branko N. Popov, Harry J. Ploehn

Faculty Publications

This work presents a mathematical model for charge/discharge of electrochemical capacitors that explicitly accounts for particle-packing effects in a composite electrochemical capacitor consisting of hydrous RuO2 nanoparticles dispersed within porous activated carbon. The model is also used to investigate the effect of nonuniform distributions of salt in the electrolyte phase of the electrode in the context of dilute solution theory. We use the model to compare the performance of capacitors with electrodes made from different activated carbons and to investigate the effects of varying carbon content and discharge current density. Even at low discharge current density, concentration polarization in …

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Study Of Sn-Coated Graphite As Anode Material For Secondary Lithium-Ion Batteries, Basker Veeraraghavan, Anand Durairajan, Bala Haran, Branko N. Popov, Ronald Guidotti Jan 2002

Study Of Sn-Coated Graphite As Anode Material For Secondary Lithium-Ion Batteries, Basker Veeraraghavan, Anand Durairajan, Bala Haran, Branko N. Popov, Ronald Guidotti

Faculty Publications

Tin-graphite composites have been developed as an alternate anode material for Li-ion batteries using an autocatalytic deposition technique. The specific discharge capacity, coulombic efficiency, rate capability behavior, and cycle life of Sn-C composites has been studied using a variety of electrochemical methods. The amount of tin loading and the heating temperature have a significant effect on the composite performance. The synthesis conditions and Sn loading on graphite have been optimized to obtain the maximum reversible capacity for the composite electrode. Heating the composite converts it from amorphous to crystalline form. Apart from higher capacity, Sn-graphite composites possesses higher coulombic efficiency, …

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Studies On Capacity Fade Of Spinel-Based Li-Ion Batteries, Ramadass Premanand, Anand Durairajan, Bala Haran, Ralph E. White, Branko N. Popov Jan 2002

Studies On Capacity Fade Of Spinel-Based Li-Ion Batteries, Ramadass Premanand, Anand Durairajan, Bala Haran, Ralph E. White, Branko N. Popov

Faculty Publications

The performance of Cell-Batt® Li-ion cells using nonstoichiometric spinel as the positive electrode material has been studied at different charging rates. The capacity of the cell was optimized based on varying the charging current and the end potential. Subsequent to this, the capacity fade of these batteries was studied at different charge currents. During cycling, cells were opened at intermittent cycles and extensive material and electrochemical characterization was done on the active material at both electrodes. For all charge currents, the resistance of both the electrodes does not vary significantly with cycling. This result is in contrast with cells …

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