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Full-Text Articles in Engineering
Comparison Of Timing Jitter In External And Monolithic Cavity Mode-Locked Semiconductor Lasers, Dennis J. Derickson, P. A. Morton, J. E. Bowers, R. L. Thornton
Comparison Of Timing Jitter In External And Monolithic Cavity Mode-Locked Semiconductor Lasers, Dennis J. Derickson, P. A. Morton, J. E. Bowers, R. L. Thornton
Electrical Engineering
A comprehensive timing jitter comparison is made for mode-locked semiconductor lasers using active, passive, and hybrid mode-locking techniques in both external and monolithic cavity configurations. Active mode locking gives the lowest residual rms timing jitter of 65 fs (150 Hz-50 MHz), followed by the hybrid and passive mode-locking techniques. It is found that monolithic cavity devices with all active waveguides have higher timing jitter levels than the comparable external cavity case.
Improved Efficiency In Semiconducting Polymer Light-Emitting Diodes, David Braun, A. J. Heeger, H. Kromer
Improved Efficiency In Semiconducting Polymer Light-Emitting Diodes, David Braun, A. J. Heeger, H. Kromer
Electrical Engineering
We report visible light emission from metal-polymer diodes made from semiconducting polymers, with indium-tin oxide as the “ohmic” contact, and a variety of metals as the barrier metal. Our results, which confirm the discovery by the Cambridge group [Nature347, 539 (1990)], demonstrate that light-emitting diodes can be fabricated by casting the polymer film on indium-tin oxide from solution with no subsequent polymer processing or heat treatment required. Electrical characterization reveals diode behavior with rectification ratios greater than 105 at sufficiently high voltages. Use of an electrode material with low work function leads to more than an order of magnitude improvement …
Efficient Single-Heterojunction Al0.27Ga0.73As/Gaas P-I-N Photodiodes With 22-Ghz Bandwidths, C. Johnson, S. Sloan, D. M. Braun, J. L. Russell, M. Zurakowski, M. Lightner, F. Kellert, G. Patterson, R. Koo, Dennis J. Derickson, J. E. Bowers
Efficient Single-Heterojunction Al0.27Ga0.73As/Gaas P-I-N Photodiodes With 22-Ghz Bandwidths, C. Johnson, S. Sloan, D. M. Braun, J. L. Russell, M. Zurakowski, M. Lightner, F. Kellert, G. Patterson, R. Koo, Dennis J. Derickson, J. E. Bowers
Electrical Engineering
A report is presented on the design, fabrication, testing, and modeling of single-heterojunction Al0.27Ga0.73As/Ga p-i-n photodiodes for use as components in optical receivers. The photodiodes are grown by molecular beam epitaxy and fabricated as 1100-μm2 mesa structures. At 5-V reverse bias and 850 nm, 100 fF of capacitance, 90 pA of leakage current, 73% external quantum efficiency, <2% reflectivity, and 22-GHz bandwidths are typically measured.
High-Frequency Electrooptic Fabry-Perot Modulators, R. J. Simes, R. H. Yan, C. C. Barron, Dennis J. Derickson, D. G. Lishan, Judy R. Karin, L. A. Coldren, M. Rodwell, S. Elliott, B. Hughes
High-Frequency Electrooptic Fabry-Perot Modulators, R. J. Simes, R. H. Yan, C. C. Barron, Dennis J. Derickson, D. G. Lishan, Judy R. Karin, L. A. Coldren, M. Rodwell, S. Elliott, B. Hughes
Electrical Engineering
Electrooptic modulators built from GaAs/AlxGa1-xAs Fabry-Perot cavities operating up to 6.5 GHz are reported. The measured frequency response agrees well with the one predicted using an equivalent circuit model derived from high-speed electrical measurements. The parasitic capacitances have been reduced to approximately 30 fF by fabricating the devices on semi-insulating GaAs substrates and integrating them with on-wafer bound pads which have dimensions compatible with microwave coplanar probes.
Visible Light Emission From Semiconducting Polymer Diodes, David Braun, A. J. Heeger
Visible Light Emission From Semiconducting Polymer Diodes, David Braun, A. J. Heeger
Electrical Engineering
We report visible light emission from Shottky diodes made from semiconducting polymers, confirming the discovery by the Cambridge group [Nature 347, 539 (1990)]. Our results demonstrate that light-emitting diodes can be fabricated by casting the polymer film from solution with no subsequent processing or heat treatment required. Electrical characterization reveals diode behavior with rectification ratios greater than 104. We propose that tunneling of electrons from the recitifying metal contact into the gap states of the positive polaron majority carriers dominates current flow and provides the mechanism for light emission.