Engineering Commons^™

Defect Characterization Of 4h-Sic By Deep Level Transient Spectroscopy (Dlts) And Influence Of Defects On Device Performance, Mohammad Abdul Mannan

Theses and Dissertations

Silicon carbide (SiC) is one of the key materials for high power opto-electronic devices due to its superior material properties over conventional semiconductors (e.g., Si, Ge, GaAs, etc). SiC is also very stable and a highly suitable material for radiation detection at room temperature and above. The availability of detector grade single crystalline bulk SiC is limited by the existing crystal growth techniques which introduce extended and microscopic crystallographic defects during the growth process. Recently, SiC based high-resolution semiconductor detectors for ionizing radiation have attracted world-wide attention due to the availability of high resistive, highly crystalline epitaxial layers with very …