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Full-Text Articles in Engineering
Characterization Of Low Pressure Chemically Vapor Deposited Boron Nitride Films As Low Dielectric Constant Materials, Manish Narayan
Boron nitride thin films were synthesized on Si and quartz wafers by low pressure chemical vapor deposition using borane triethylamine complex and ammonia as precursors. The films were processed at 400°C, 475°C and 550°C at a constant pressure of 0.5 Torr and at different precursor flow ratios.
The films deposited were uniform, amorphous and the composition of the films varied with deposition temperature and precursor flow ratios. The thickness of the film increased with increasing flow ratio, but, decreased with increasing temperature. The stresses in the film were either mildly tensile or compressive.
The least dielectric ...
Synthesis Of Boron Nitride/Vycor Composite Membrane Structures By An Optimized Lpcvd Process, Chenna Ravindranath
Since the advent of the idea of ultrafiltration, microporous membranes have come through a long way in establishing a niche as an efficient technology for gas separation applications. More and more research is aimed at reducing pore size towards nanolevels, when separation factor is the criterion rather than the permeability. This work is focused at synthesizing and characterizing microporous inorganic membranes for gas separations by molecular sieving. BN was deposited on mesoporous vycor tubes using triethylamine borane complex (TEAB) and ammonia as precursors. Effect of temperature and deposition geometry on permeability of various gases has been studied. Very high selectivities ...
Low Pressure Chemical Vapor Deposition Of Tungsten As An Absorber For X-Ray Masks, Hongyu Chen
Tungsten film is one of promising materials for X-ray absorber in X-ray Lithography technology because of its high X-ray absorption and refractory properties. This study focus on CVD method to make tungsten film for X-ray absorber.
In this work, a cold wall, single wafer, Spectrum 211 CVD reactor was used for the deposition of tungsten from H, and WF6. The growth kinetics were determined as a function of temperature, pressure and flow ratio. The deposition rate of as deposited tungsten films was found to follow an Arrehnius behavior in the range of 300-500°C with an activation energy of 55 ...