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An Investigation Of The Speed And Power Limitations Of A Copper-Doped Gallium Arsenide Photoconductive Switch, David Clifton Stoudt
An Investigation Of The Speed And Power Limitations Of A Copper-Doped Gallium Arsenide Photoconductive Switch, David Clifton Stoudt
Electrical & Computer Engineering Theses & Dissertations
The processes of persistent photoconductivity followed by photo-quenching are demonstrated in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse (λ = 1.06 μm) and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser (λ= 2.13 μm). Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser …
Compensation And Characterization Of Gallium Arsenide, Randy A. Roush
Compensation And Characterization Of Gallium Arsenide, Randy A. Roush
Electrical & Computer Engineering Theses & Dissertations
The properties of transition metals in gallium arsenide have been previously investigated extensively with respect to activation energies, but little effort has been made to correlate processing parameters with electronic characteristics. Diffusion of copper in gallium arsenide is of technological importance due to the development of GaAs:Cu bistable photoconductive devices. Several techniques are demonstrated in this work to develop and characterize compensated gallium arsenide wafers. The material is created by the thermal diffusion of copper into silicon-doped GaAs. Transition metals generally form deep and shallow acceptors in GaAs, and therefore compensation is possible by material processing such that the shallow …