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Low Pressure Chemical Vapor Deposition Of Silicon Nitride Films From Ditertiarybutylsilane, Xiangqun Fan
Low Pressure Chemical Vapor Deposition Of Silicon Nitride Films From Ditertiarybutylsilane, Xiangqun Fan
Theses
In this study amorphous stoichiometric silicon nitride films were synthesized by low pressure chemical vapor deposition (LPCVD) using DTBS (ditertiarybutylsilane) and ammonia (NH3). The growth kinetics were determined as a function of temperature in the range of 600-900 00, pressure in the range of 0.2-1.1 Torr, DTBS flow rate in the range of 10-50 sccm, and NH3/DTBS flow ratio in the range of 5-20. At constant condition of pressure (0.5 Torr), DTBS flow rate (10sccm) and NH3 flow rate (100 sccm), the deposition rate of as-deposited silicon nitride films was found to follow an Arrehnius …