Engineering Commons^™

A Statistical Theory Of Avalanche Breakdown In Silicon, Terence Vincent Sewards

Electrical and Computer Engineering ETDs

A statistical theory of avalanche breakdown in silicon is presented, based on the conventional Boltzmann transport equation. The scattering mechanisms considered are impact ionization (electron-hole pair production), phonon emission and absorption, thermal generation and recombination. The resultant critical field is found to depend on the recombination statistics, which were ignored in previous theories of avalanche breakdown. The theoretical temperature dependence is compared with the temperature dependence of the breakdown voltages of three conunercial diodes.

The Development And Use Of Scattering Parameters For Semiconductor Junction Devices, Lee Dennis Philipp

Electrical and Computer Engineering ETDs

Scattering parameters are developed for diodes and tran­sistors. The parameters are developed through a modification of the wave equation from quantum mechanics. The effects of pulsed X-ray radiation on these devices is then calculated with the use of these parameters.

Various methods of analyzing semiconductor junction de­vices are discussed. These methods include diffusion theory, invariant imbedding and quantum mechanics. The background in these areas necessary for a discussion of semiconductor models is outlined.

Models resulting from the three basic approaches are presented. These include the Ebers-Moll Model, the Charge Control Model, the Linville Model, the Gore Model, the MLB (McKelvey, …