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Full-Text Articles in Engineering
Intrinsic And Atomic Layer Etching Enhanced Area-Selective Atomic Layer Deposition Of Molybdenum Disulfide Thin Films, Jake Soares, Wesley Jen, John D. Hues, Drew Lysne, Jesse Wensel, Steven M. Hues, Elton Graugnard
Intrinsic And Atomic Layer Etching Enhanced Area-Selective Atomic Layer Deposition Of Molybdenum Disulfide Thin Films, Jake Soares, Wesley Jen, John D. Hues, Drew Lysne, Jesse Wensel, Steven M. Hues, Elton Graugnard
Materials Science and Engineering Faculty Publications and Presentations
For continual scaling in microelectronics, new processes for precise high volume fabrication are required. Area-selective atomic layer deposition (ASALD) can provide an avenue for self-aligned material patterning and offers an approach to correct edge placement errors commonly found in top-down patterning processes. Two-dimensional transition metal dichalcogenides also offer great potential in scaled microelectronic devices due to their high mobilities and few-atom thickness. In this work, we report ASALD of MoS2 thin films by deposition with MoF6 and H2S precursor reactants. The inherent selectivity of the MoS2 atomic layer deposition (ALD) process is demonstrated by growth …
Thermal Atomic Layer Etching Of Mos2 Using Mof6 And H2O, Jake Soares, Anil U. Mane, Devika Choudhury, Steven Letourneau, Steven M. Hues, Jeffrey W. Elam, Elton Graugnard
Thermal Atomic Layer Etching Of Mos2 Using Mof6 And H2O, Jake Soares, Anil U. Mane, Devika Choudhury, Steven Letourneau, Steven M. Hues, Jeffrey W. Elam, Elton Graugnard
Materials Science and Engineering Faculty Publications and Presentations
Two-dimensional (2D) layered materials offer unique properties that make them attractive for continued scaling in electronic and optoelectronic device applications. Successful integration of 2D materials into semiconductor manufacturing requires high-volume and high-precision processes for deposition and etching. Several promising large-scale deposition approaches have been reported for a range of 2D materials, but fewer studies have reported removal processes. Thermal atomic layer etching (ALE) is a scalable processing technique that offers precise control over isotropic material removal. In this work, we report a thermal ALE process for molybdenum disulfide (MoS2). We show that MoF6 can be used as …
Atomic Layer Deposition Of Sodium Fluoride Thin Films, Sara Kuraitis, Donghyeon Kang, Anil U. Mane, Hua Zhou, Jake Soares, Jeffrey W. Elam, Elton Graugnard
Atomic Layer Deposition Of Sodium Fluoride Thin Films, Sara Kuraitis, Donghyeon Kang, Anil U. Mane, Hua Zhou, Jake Soares, Jeffrey W. Elam, Elton Graugnard
Materials Science and Engineering Faculty Publications and Presentations
The need for advanced energy conversion and storage devices remains a critical challenge amid the growing worldwide demand for renewable energy. Metal fluoride thin films are of great interest for applications in lithium-ion and emerging rechargeable battery technologies, particularly for enhancing the stability of the electrode-electrolyte interface and thereby extending battery cyclability and lifetime. Reported within, sodium fluoride (NaF) thin films were synthesized via atomic layer deposition (ALD). NaF growth experiments were carried out at reactor temperatures between 175 and 250 °C using sodium tert-butoxide and HF-pyridine solution. The optimal deposition temperature range was 175–200 °C, and the resulting …
First-Principles Studies Of Mof Absorption On Hydroxylated And Non-Hydroxylated Metal Oxide Surfaces And Implications For Atomic Layer Deposition Of Mos2, Matthew Lawson, Elton Graugnard, Lan Li
First-Principles Studies Of Mof Absorption On Hydroxylated And Non-Hydroxylated Metal Oxide Surfaces And Implications For Atomic Layer Deposition Of Mos2, Matthew Lawson, Elton Graugnard, Lan Li
Materials Science and Engineering Faculty Publications and Presentations
Significant interest in two-dimensional transition metal dichalcogenides has led to numerous experimental studies of their synthesis using scalable vapor phase methods, such as chemical vapor deposition (CVD) and atomic layer deposition (ALD). ALD typically allows lower deposition temperatures, and nucleation of chemical precursors requires reactions with surface functional groups. A common first-principles method used to study ALD modeling is the calculation of activation energy for a proposed reaction pathway. In this work we calculated the partial charge densities, local density of states (LDoS), Bader charge analysis, adsorption energies, and charge density difference using density functional theory (DFT) to investigate the …
Structural Evolution Of Molybdenum Disulfide Prepared By Atomic Layer Deposition For Realization Of Large Scale Films In Microelectronic Applications, Steven Letourneau, Elton Graugnard
Structural Evolution Of Molybdenum Disulfide Prepared By Atomic Layer Deposition For Realization Of Large Scale Films In Microelectronic Applications, Steven Letourneau, Elton Graugnard
Materials Science and Engineering Faculty Publications and Presentations
Molybdenum disulfide (MoS2) films are attractive materials for electronic and optoelectronic devices, but the temperatures used in the chemical vapor deposition (CVD) of these materials are too high for device integration. Recently, a low-temperature atomic layer deposition (ALD) process was demonstrated for growth of MoS2 films at 200 °C using MoF6 and H2S. However, the as-deposited films were amorphous and required annealing to obtain the desired layered structure. The MoS2 films were sulfur-deficient; however, after annealing the crystallinity improved. To study the structure of these films and the process by which they crystallize, …
Atomic Layer Deposition Of Molybdenum Disulfide Films Using Mof6 And H2S, Steven Letourneau, Elton Graugnard
Atomic Layer Deposition Of Molybdenum Disulfide Films Using Mof6 And H2S, Steven Letourneau, Elton Graugnard
Materials Science and Engineering Faculty Publications and Presentations
Molybdenum sulfide films were grown by atomic layer deposition on silicon and fused silica substrates using molybdenum hexafluoride (MoF6) and hydrogen sulfide at 200 °C. In situ quartz crystal microbalance (QCM) measurements confirmed linear growth at 0.46 Å/cycle and self-limiting chemistry for both precursors. Analysis of the QCM step shapes indicated that MoS2 is the reaction product, and this finding is supported by x-ray photoelectron spectroscopy measurements showing that Mo is predominantly in the Mo(IV) state. However, Raman spectroscopy and x-ray diffraction measurements failed to identify crystalline MoS2 in the as-deposited films, and this might result …
Photonic Band Tuning In 2d Photonic Crystals By Atomic Layer Deposition, Elton Graugnard, Davy P. Gaillot, Simon N. Dunham, Curtis W. Neff, Tsuyoshi Yamashita, Christopher J. Summers
Photonic Band Tuning In 2d Photonic Crystals By Atomic Layer Deposition, Elton Graugnard, Davy P. Gaillot, Simon N. Dunham, Curtis W. Neff, Tsuyoshi Yamashita, Christopher J. Summers
Materials Science and Engineering Faculty Publications and Presentations
Atomic layer deposition (ALD) has become a powerful tool for the fabrication of high quality 3-dimentional photonic crystals (PCs) from both inorganic (opal) and organic (holographically patterned polymer) templates [1,2]. With ALD, highly conformal films can be grown with a precision of 0.05 nm, which, when combined with the availability of a wide range of low temperature film growth protocols, enables a high degree of control over material and structural properties to precisely tune optical properties [3]. Two-dimensional photonic crystals have been developed extensively for applications in optical interconnects, beam steering, and sensor devices; and are predominantly fabricated by electron-beam …