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Silicon-Germanium Heterojunction Bipolar Transistors For Large-Scale Low-Power Cryogenic Sensing Systems, Shirin Montazeri
Silicon-Germanium Heterojunction Bipolar Transistors For Large-Scale Low-Power Cryogenic Sensing Systems, Shirin Montazeri
Doctoral Dissertations
Cryogenic low noise amplifiers (LNAs) are one of the key components in many emerging applications such as radio astronomy or quantum computing in which a weak incoming signal needs to be read out. There have been extensive studies on the feasibility of leveraging silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) to implement cryogenic LNAs in the past. The deployment of such LNAs in the future large-scale systems in radio astronomy or quantum computing is contingent upon the possibility of developing LNAs with reduced DC power dissipation to enable the cooling of a large number of array elements inside a cryogenic cooler. …