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Articles 1 - 5 of 5
Full-Text Articles in Engineering
Photoluminescence Switching In Quantum Dots Connected With Fluorinated And Hydrogenated Photochromic Molecules, Ephraiem S. Sarabamoun, Jonathan M. Bietsch, Pramod Aryal, Amelia G. Reid, Maurice Curran, Grayson Johnson, Esther H. R. Tsai, Charles W. Machan, Guijun Wang, Joshua J. Choi
Photoluminescence Switching In Quantum Dots Connected With Fluorinated And Hydrogenated Photochromic Molecules, Ephraiem S. Sarabamoun, Jonathan M. Bietsch, Pramod Aryal, Amelia G. Reid, Maurice Curran, Grayson Johnson, Esther H. R. Tsai, Charles W. Machan, Guijun Wang, Joshua J. Choi
Chemistry & Biochemistry Faculty Publications
We investigate switching of photoluminescence (PL) from PbS quantum dots (QDs) crosslinked with two different types of photochromic diarylethene molecules, 4,4'-(1-cyclopentene-1,2-diyl)bis[5-methyl-2-thiophenecarboxylic acid] (1H) and 4,4'-(1-perfluorocyclopentene-1,2-diyl)bis[5-methyl-2-thiophenecarboxylic acid] (2F). Our results show that the QDs crosslinked with the hydrogenated molecule (1H) exhibit a greater amount of switching in photoluminescence intensity compared to QDs crosslinked with the fluorinated molecule (2F). With a combination of differential pulse voltammetry and density functional theory, we attribute the different amount of PL switching to the different energy levels between 1H and 2F molecules which result in different potential barrier …
Light Soaking Phenomena In Organic-Inorganic Mixed Halide Perovskite Single Crystals, Hye Ryung Byun, Dae Young Park, Hye Min Oh, Gon Namkoong, Mun Seok Jeong
Light Soaking Phenomena In Organic-Inorganic Mixed Halide Perovskite Single Crystals, Hye Ryung Byun, Dae Young Park, Hye Min Oh, Gon Namkoong, Mun Seok Jeong
Electrical & Computer Engineering Faculty Publications
Recently, organic inorganic mixed halide perovskite (MAPbX3; MA = CH3NH3+, X = Cl-, Br-, or I-) single crystals with low defect densities have been highlighted as candidate materials for high-efficiency photovoltaics and optoelectronics. Here we report the optical and structural investigations of mixed halide perovskite (MAPbBr3-xIx) single crystals. Mixed halide perovskite single crystals showed strong light soaking phenomena with light illumination conditions that were correlated to the trapping and detrapping events from defect sites. By systematic investigation with optical analysis, we found that the …
Synthesis Of Ald Zinc Oxide And Thin Film Materials Optimization For Uv Photodetector Applications, Kandabara Nouhoum Tapily
Synthesis Of Ald Zinc Oxide And Thin Film Materials Optimization For Uv Photodetector Applications, Kandabara Nouhoum Tapily
Electrical & Computer Engineering Theses & Dissertations
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material. It is thermodynamically stable in the wurtzite structure at ambient temperature conditions. ZnO has very interesting optical and electrical properties and is a suitable candidate for numerous optoelectronic applications such as solar cells, LEDs and UV-photodetectors. ZnO is a naturally n-type semiconductor. Due to the lack of reproducible p-type ZnO, achieving good homojunction ZnO-based photodiodes such as UV-photodetectors remains a challenge. Meanwhile, heterojunction structures of ZnO with p-type substrates such as SiC, GaN, NiO, AlGaN, Si etc. are used; however, those heterojunction diodes suffer from low efficiencies. ZnO is an …
An Erasable Optical Memory Based On Stimulated Electronic Transition Concept, James D. Satira
An Erasable Optical Memory Based On Stimulated Electronic Transition Concept, James D. Satira
Electrical & Computer Engineering Theses & Dissertations
Erasable optical memory systems with a high storage density and a large data transfer rate are required for many real time data acquisition systems such as those placed aboard NASA's space born platforms. A new concept for erasable optical memory involving stimulated electronic transitions (SET) will meet these requirements. The SET concept useful in erasable optical storage systems was demonstrated in MgS and SrS doped with Eu and Sm. The optical properties of these materials were studied. The reading and writing wavelengths for these samples were determined to be 950 and 514 nm respectively. The peaks of the emission spectra …
Luminescence In Slipped And Dislocation-Free Laser-Annealed Silicon, R.H. Uebbing, P. Wagner, H. Baumgart, H. J. Queisser
Luminescence In Slipped And Dislocation-Free Laser-Annealed Silicon, R.H. Uebbing, P. Wagner, H. Baumgart, H. J. Queisser
Electrical & Computer Engineering Faculty Publications
Photoluminescence of cw laser-annealed silicon shows a dramatic difference in electronic behavior of the reconstructed material depending upon either creation or suppression of dislocations. Beyond a critical exposure time slip appears, and the luminescence of these samples is dominated by dislocation-related defect levels.