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Articles 1 - 26 of 26
Full-Text Articles in Engineering
Quantitative, Photocurrent Multidimensional Coherent Spectroscopy, Adam Halaoui
Quantitative, Photocurrent Multidimensional Coherent Spectroscopy, Adam Halaoui
Electronic Theses and Dissertations
Multidimensional coherent spectroscopy (MDCS) is a quickly growing field that has a lot of advantages over more conventional forms of spectroscopy. These advantages all come from the fact that MDCS allows us to get time resolved correlated emission and absorption spectra using very precisely chosen interactions between the density matrix and the excitation laser. MDCS spectra gives the researcher a lot of information that can be extracted purely through qualitative analysis. This is possible because state couplings are entirely separated on the spectra, and once we know how to read the data, we can see how carriers transport in the …
Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers
Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers
Physics Undergraduate Honors Theses
Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …
Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi
Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi
Graduate Theses and Dissertations
This work focuses on the investigation of gate-defined quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe2) as a means to unravel mesoscopic physical phenomena such as valley-contrasting physics in WSe2 flakes and its potential application as qubit, as well as realizing gate-controlled quantum dots based on elementaltellurium nanostructures which may unlock the topological nature of the host material carriers such as Weyl states in tellurium nanowires.The fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2 are reported. The gate electrodes in the device design are located above and below the WSe2 nanoflakes to accumulate …
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Master's Theses
The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor's breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling …
Ii-Vi Type-Ii Quantum Dot Superlattices For Novel Applications, Vasilios Deligiannakis
Ii-Vi Type-Ii Quantum Dot Superlattices For Novel Applications, Vasilios Deligiannakis
Dissertations, Theses, and Capstone Projects
In this thesis, we discuss the growth procedure and the characterization results obtained for epitaxially grown submonolayer type-II quantum dot superlattices made of II-VI semiconductors. We have investigated the spin dynamics of ZnSe layers with embedded type-II ZnTe quantum dots and the use of (Zn)CdTe/ZnCdSe QDs for intermediate band solar cell (IBSC). Samples with a higher quantum dot density exhibit longer electron spin lifetimes, up to ~1 ns at low temperatures. Tellurium isoelectronic centers, which form in the ZnSe spacer regions as a result of the growth conditions, were also probed. A new growth sequence for type-II (Zn)CdTe/ZnCdSe (QDs) was …
Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds
Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds
Materials Science and Engineering Faculty Publications and Presentations
Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we …
Generalizable Modeling Of Charge Transport In Single Electron Transistor Devices: Application To Thermal Sensitivity In Semiconducting Island Systems, Paniz Khanmohammadi Hazaveh
Generalizable Modeling Of Charge Transport In Single Electron Transistor Devices: Application To Thermal Sensitivity In Semiconducting Island Systems, Paniz Khanmohammadi Hazaveh
Dissertations, Master's Theses and Master's Reports
Electronic devices, especially MOSFETs, have been dimensionally scaled down to enhance operation of integrated circuits, addressing challenges such as current leakage, fluctuation of intrinsic semiconductor properties, and power dissipation. Reaching dimensions below 20 nm, there are fundamental limitations that are difficult to overcome, driving alternative device paradigms to be sought utilizing the quantum mechanical behavior of electrons. Single electron transistor (SET) devices are examples of a new generation of low-power transistors designed to transport information via single electron tunneling through one or more islands separated by tunnel junctions. Experimentally explored SET devices have shown that there are advantages to using …
Nonlinear Coupled Effects In Nanomaterials, Sia Bhowmick
Nonlinear Coupled Effects In Nanomaterials, Sia Bhowmick
Theses and Dissertations (Comprehensive)
Materials at the nanoscale have different chemical, structural, and optoelectrical properties compared to their bulk counterparts. As a result, such materials, called nanomaterials, exhibit observable differences in certain physical phenomena. One such resulting phenomenon called the piezoelectric effect has played a crucial role in miniature self-powering electronic devices called nanogenerators which are fabricated by using nanostructures, such as nanowires, nanorods, and nanofilms. These devices are capable of harvesting electrical energy by inducing mechanical strain on the individual nanostructures. Electrical energy created in this manner does not have environmental limitations. In this thesis, important coupled effects, such as the nonlinear piezoelectric …
Synergistic Interactions Of H2 And N2 With Molten Gallium In The Presence Of Plasma, Maria L. Carreon, Daniel F. Jaramillo-Cabanzo, Indira Chaudhuri, Madhu Menon, Mahendra K. Sunkara
Synergistic Interactions Of H2 And N2 With Molten Gallium In The Presence Of Plasma, Maria L. Carreon, Daniel F. Jaramillo-Cabanzo, Indira Chaudhuri, Madhu Menon, Mahendra K. Sunkara
Physics and Astronomy Faculty Publications
The present study examines the interaction of hydrogen and nitrogen plasmas with gallium in an effort to gain insights into the mechanisms behind the synergetic effect of plasma and a catalytic metal. Absorption/desorption experiments were performed, accompanied by theoretical-computational calculations. Experiments were carried out in a plasma-enhanced, Ga-packed, batch reactor and entailed monitoring the change in pressure at different temperatures. The results indicated a rapid adsorption/dissolution of the gas into the molten metal when gallium was exposed to plasma, even at a low temperature of 100 °C. The experimental observations, when hydrogen was used, indicate that gallium acts as a …
Quantum Dot Band Gap Investigations, John Ryan Peterson
Quantum Dot Band Gap Investigations, John Ryan Peterson
Student Works
Improving solar panel efficiency has become increasingly important as the world searches for cheap renewable energy. Recent developments in the industry have focused on multi-layer cells, some of which use semiconducting dyes to absorb light in place of crystalline solids. In this paper, I characterize various dyes recently synthesized for use in solar panels. These dyes contain semiconducting nanoparticles enclosed primarily by the protein ferritin to limit particle size. The band gaps were measured using either optical absorption spectroscopy or measuring the photoluminescence spectrum, depending on the type of semiconductor. The results indicate that both manganese oxide and lead sulfide …
Nanostructured Organic/Inorganic Semicondutor Photovoltaics: Investigation On Morphology And Optoelectronics Performance, Aruna Wanninayake
Nanostructured Organic/Inorganic Semicondutor Photovoltaics: Investigation On Morphology And Optoelectronics Performance, Aruna Wanninayake
Theses and Dissertations
Organic solar cell is a promising technology because of the versatility of organic materials in terms of tunability of their electrical and optical properties. In addition, their relative insensitivity to film imperfections potentially allows for very low-cost high-throughput roll-to-roll processing. However, the power conversion efficiency of organic solar cell is still limited and needs to be improved in order to be competitive with grid parity. This work is focused on the design and characterization of a new organic/inorganic hybrid device to enhance the efficiency factors of bilayer organic solar cells such as: light absorption, exciton diffusion, exciton dissociation, charge transportation …
Zncdmgse As A Materials Platform For Advanced Photonic Devices: Broadband Quantum Cascade Detectors And Green Semiconductor Disk Lasers, Joel De Jesus
Zncdmgse As A Materials Platform For Advanced Photonic Devices: Broadband Quantum Cascade Detectors And Green Semiconductor Disk Lasers, Joel De Jesus
Dissertations, Theses, and Capstone Projects
The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for …
Exchange Mechanisms In Macroscopic Ordered Organic Magnetic Semiconductors, Naveen Rawat
Exchange Mechanisms In Macroscopic Ordered Organic Magnetic Semiconductors, Naveen Rawat
Graduate College Dissertations and Theses
Small molecule organic semiconductors such as phthalocyanines and their derivatives represent a very interesting alternative to inorganic semiconductor materials for the development of flexible electronic devices such as organic thin field effect transistors, organic Light Emitting Diodes and photo-voltaic cells. Phthalocyanine molecules can easily accommodate a variety of metal atoms as well in the central core of the molecule, resulting in wide range of magnetic properties. Exploration of optical properties of organic crystalline semiconductors thin films is challenging due to sub-micron grain sizes and the presence of numerous structural defects, disorder and grain boundaries. However, this can be overcome by …
Two-Photon Absorption In Bulk Semiconductors And Quantum Well Structures And Its Applications, Himansu Pattanaik
Two-Photon Absorption In Bulk Semiconductors And Quantum Well Structures And Its Applications, Himansu Pattanaik
Electronic Theses and Dissertations
The purpose of this dissertation is to provide a study and possible applications of two-photon absorption (2PA), in direct-gap semiconductors and quantum-well (QW) semiconductor structures. One application uses extremely nondegenerate (END) 2PA, for mid-infrared (mid-IR) detection in uncooled semiconductors. The use of END, where the two photons have very different energies gives strong enhancement comapared to degenerate 2PA. This END-2PA enhanced detection is also applied to mid-IR imaging and light detection and ranging (LIDAR) in uncooled direct-gap photodiodes. A theoretical study of degenerate 2PA (D-2PA) in quantum wells, QWs, is presented, along with a new theory of ND 2PA in …
Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez
Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez
Open Access Theses & Dissertations
Cadmium Telluride is a material widely used in terrestrial thin film photovoltaic applications due to its nearly ideal band gap (~1.5 eV) and high absorption coefficient. Due to its low manufacturing cost, this technology has the potential to become a significant energy resource if higher energy conversion efficiencies are achieved. However, the module efficiencies (~14%) are still far from the theoretical maximum (~30%) for this material in a single junction configuration. The reason behind this low performance is attributed to the high number of defects that are present within the device materials. The physics behind the formation mechanisms of these …
Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Faculty Publications
Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same …
Experimental And Theoretical Approaches To Characterization Of Electronic Nonlinearities In Direct-Gap Semiconductors, Claudiu Cirloganu
Experimental And Theoretical Approaches To Characterization Of Electronic Nonlinearities In Direct-Gap Semiconductors, Claudiu Cirloganu
Electronic Theses and Dissertations
The general goal of this dissertation is to provide a comprehensive description of the limitations of established theories on bound electronic nonlinearities in direct-gap semiconductors by performing various experiments on wide and narrow bandgap semiconductors along with developing theoretical models. Nondegenerate two-photon absorption (2PA) is studied in several semiconductors showing orders of magnitude enhancement over the degenerate counterpart. In addition, three-photon absorption (3PA) is studied in ZnSe and other semiconductors and a new theory using a Kane 4-band model is developed which fits new data well. Finally, the narrow gap semiconductor InSb is studied with regard to multiphoton absorption, free-carrier …
Nonlinear Absorption And Free Carrier Recombination In Direct Gap Semiconductors, Peter D. Olszak
Nonlinear Absorption And Free Carrier Recombination In Direct Gap Semiconductors, Peter D. Olszak
Electronic Theses and Dissertations
Nonlinear absorption of Indium Antimonide (InSb) has been studied for many years, yet due to the complexity of absorption mechanisms and experimental difficulties in the infrared, this is still a subject of research. Although measurements have been made in the past, a consistent model that worked for both picosecond and nanosecond pulse widths had not been demonstrated. In this project, temperature dependent two-photon (2PA) and free carrier absorption (FCA) spectra of InSb are measured using femtosecond, picosecond, and nanosecond IR sources. The 2PA spectrum is measured at room temperature with femtosecond pulses, and the temperature dependence of 2PA and FCA …
The Effects Of Pressure On Wide Bandgap Gan Semiconductors, William Kang, Linda Tran, Eunja Kim
The Effects Of Pressure On Wide Bandgap Gan Semiconductors, William Kang, Linda Tran, Eunja Kim
Undergraduate Research Opportunities Program (UROP)
Gallium nitride (GaN) is a group-III nitride semiconductor; which may prove useful in developing optical instruments that operate under high ambient pressures. The purpose of this project is to examine the properties of GaN under varying conditions. The methods used in this experiment consist of modeling free energy as a function of lattice constants; calculating bond lengths, bond strengths, and bulk moduli; and comparing the resultant data with values in published literature. We will also compare these results with experimental data drawn from x-ray diffraction scans. By doing so, we hope to determine whether gallium nitride is suitable for use …
Integrated Inp Photonic Switches, Daniel May-Arrioja
Integrated Inp Photonic Switches, Daniel May-Arrioja
Electronic Theses and Dissertations
Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of integrated InP photonic switches using an area-selective zinc diffusion process …
Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips
Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips
Theses and Dissertations
Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …
Quantum Mechanical Calculations Of Monoxides Of Silicon Carbide Molecules, John W. Roberts Jr.
Quantum Mechanical Calculations Of Monoxides Of Silicon Carbide Molecules, John W. Roberts Jr.
Theses and Dissertations
Modern semiconductor devices are principally made using the element silicon. In recent years, silicon carbide (SiC), with its wide band-gap, high thermal conductivity, and radiation resistance, has shown prospects as a semiconductor material for use in high temperature and radiation environments such as jet engines and satellites. A limiting factor in the performance of many SiC semiconductor components is the presence of lattice defects formed at oxide dielectric junctions during processing. Recent theoretical work has used small quantum mechanical systems embedded in larger molecular mechanics structures to attempt to better understand SiC surfaces and bulk materials and their oxidation. This …
Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan
Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan
Theses and Dissertations
The Air Force has a growing need for the greater bandwidth, speed, and flexibility offered by optical communication links. Future space systems and airborne platforms will most likely use optical signals for efficient power transmission and to minimize the possibility of spoofing and eavesdropping. Tunable optical delays play an important role in the implementation of free space optical communication links. The primary challenge in implementing these systems is the active maintenance of coherent wave fronts across the system's optical aperture. For space applications, this aperture may he hundreds of meters in diameter. Spatial segmentation of a large aperture into smaller …
Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce
Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce
Bioelectrics Publications
We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low‐energy phototransistor application for …
Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen
Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen
Bioelectrics Publications
The temporal development of the electric field distribution in semi‐insulating GaAs photoconductive switches operated in the linear and lock‐on mode has been studied. The field structure was obtained by recording a change in the absorption pattern of the switch due to the Franz–Keldysh effect at a wavelength near the band edge of GaAs. In the linear mode, a high field layer develops at the cathode contact after laser activation. With increasing applied voltage, domainlike structures become visible in the anode region and the switch transits into the lock‐on state, a permanent filamentary electrical discharge. Calibration measurements show the field intensity …
Electron Beam Effects In The Analysis Of Compound Semiconductors And Devices, Nancy Burnham, Ll Kazmerski, Ab Swartzlander, Aj Nelson, Se Asher
Electron Beam Effects In The Analysis Of Compound Semiconductors And Devices, Nancy Burnham, Ll Kazmerski, Ab Swartzlander, Aj Nelson, Se Asher
Nancy A. Burnham
The effects of electron beams on the analysis of CuInSe2surfaces are examined in this paper. Potential changes in the surface chemistry—including oxidation and desorption—under a range of incident probe conditions, are investigated for possible artifactual information generation. Emphasis is placed on the relationships between beam conditions and oxygen chemisorption and physisorption, since oxygen treatments of devices utilizing this semiconductor are critical to performance. Single crystals and polycrystalline thin films are analyzed and compared to establish the beam‐induced phenomena.