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Structural And Electrical Properties Of Barium Strontium Titanate Thin Films For Tunable Microwave Applications, Sriraj G. Manavalan

USF Tampa Graduate Theses and Dissertations

The dependence of dielectric permittivity on the applied electric field, high dielectric constant and low cost makes barium strontium titanate (BST) a promising ferroelectric material for applications in tunable microwave devices. High tunability and low dielectric loss is desired for tunable microwave devices. The primary objective of this research was to optimize the tunability and dielectric loss of BST thin films at microwave frequencies with different deposition techniques. Ba0.5Sr0.5TiO3 thin films were grown on Pt/TiO₂/SiO₂/Si, by pulsed laser deposition (PLD) and sputtering. Parallel plate capacitor structures were designed using ADS and fabricated. The microstructural and phase …

High Resistivity Zinc Stannate As A Buffer Layer In Cds/Cdte Solar Cells, Sudhakar R. Gayam

USF Tampa Graduate Theses and Dissertations

The electrical conductivity of transparent conducting oxides is well exploited in front surface electrodes for solar cells where high transmission is also important. Fluorine doped tin oxide (SnO₂: F) is the most popular choice of front contacts for CdTe solar cells. In this thesis, Cd₂SnO₄ and Zn₂SnO₄ thin films are investigated focusing on their electrical and optical properties and used them in solar cells. Processing for these materials is optimized for optimum solar cell performance.

Cd₂SnO₄ thin films are deposited by co-sputtering of CdO and SnO₂ targets in …

Molybdenum As A Back Contact For Cucl Treated Cds/Cdte Solar Cells, Matheshkumar Jayabal

USF Tampa Graduate Theses and Dissertations

CdTe is one of the most promising absorbers for use in inexpensive semiconductor solar cells having achieved a high efficiency of 16.4% in small area cells [1]. One of the most important technological problems in obtaining high efficiencies is to have a good ohmic contact on the CdTe, which is characterized by a very high work function [2]. Cu is used as a dopant in CdTe at the contact to promote quantum mechanical tunneling [3]. But the oversupply of Cu causes the diffusion of Cu through CdTe to the underlying CdS layer resulting in the degradation of the cell performance. …