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A High-Temperature, High-Voltage Soi Gate Driver Integrated Circuit With High Drive Current For Silicon Carbide Power Switches, Mohammad Aminul Huque
A High-Temperature, High-Voltage Soi Gate Driver Integrated Circuit With High Drive Current For Silicon Carbide Power Switches, Mohammad Aminul Huque
Doctoral Dissertations
High-temperature integrated circuit (IC) design is one of the new frontiers in microelectronics that can significantly improve the performance of the electrical systems in extreme environment applications, including automotive, aerospace, well-logging, geothermal, and nuclear. Power modules (DC-DC converters, inverters, etc.) are key components in these electrical systems. Power-to-volume and power-to-weight ratios of these modules can be significantly improved by employing silicon carbide (SiC) based power switches which are capable of operating at much higher temperature than silicon (Si) and gallium arsenide (GaAs) based conventional devices. For successful realization of such high-temperature power electronic circuits, associated control electronics also need to …
A Fully Integrated High-Temperature, High-Voltage, Bcd-On-Soi Voltage Regulator, Benjamin Matthew Mccue
A Fully Integrated High-Temperature, High-Voltage, Bcd-On-Soi Voltage Regulator, Benjamin Matthew Mccue
Masters Theses
Developments in automotive (particularly hybrid electric vehicles), aerospace, and energy production industries over the recent years have led to expanding research interest in integrated circuit (IC) design toward high-temperature applications. A high-voltage, high-temperature SOI process allows for circuit design to expand into these extreme environment applications. Nearly all electronic devices require a reliable supply voltage capable of operating under various input voltages and load currents. These input voltages and load currents can be either DC or time-varying signals. In this work, a stable supply voltage for embedded circuit functions is generated on chip via a voltage regulator circuit producing a …