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Scanning electron microscopy

Legacy Theses & Dissertations (2009 - 2024)

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Determination Of Current Density Distribution In An Electron Beam, Yudhishthir Prasad Kandel Jan 2015

Determination Of Current Density Distribution In An Electron Beam, Yudhishthir Prasad Kandel

Legacy Theses & Dissertations (2009 - 2024)

Electron beams are useful in many applications because they can be focused down to a spot far exceeding the physical limit of focusing visible light or x-rays. Additionally, electron beams are useful in transferring concentrated amounts of energy to a very small well defined region of a target for a fixed duration. This has led to the development of both scanning electron microscopes (SEMs) and electron beam lithography. The goal of this work was to develop a general method that accurately and easily yields the best estimate of the electron current density distribution of a focused electron beam, known as …


Nanoparticle Generation And Interactions With Surfaces In Vacuum Systems, Yashdeep Khopkar Jan 2015

Nanoparticle Generation And Interactions With Surfaces In Vacuum Systems, Yashdeep Khopkar

Legacy Theses & Dissertations (2009 - 2024)

Extreme ultraviolet lithography (EUVL) is the most likely candidate as the next generation technology beyond immersion lithography to be used in high volume manufacturing in the semiconductor industry. One of the most problematic areas in the development process is the fabrication of mask blanks used in EUVL. As the masks are reflective, there is a chance that any surface aberrations in the form of bumps or pits could be printed on the silicon wafers. There is a strict tolerance to the number density of such defects on the mask that can be used in the final printing process. Bumps on …


Progress Towards Critical Dimension Low Vacuum Scanning Electron Microscopy, Vasiliki Tileli Jan 2009

Progress Towards Critical Dimension Low Vacuum Scanning Electron Microscopy, Vasiliki Tileli

Legacy Theses & Dissertations (2009 - 2024)

Low vacuum scanning electron microscopy (LVSEM) is proposed and evaluated for next generation Critical Dimension (CD) metrology. Its ability to control charging artifacts and hydrocarbon contamination in order to obtain high signal-to-noise ratio, high resolution image data from insulating materials make the technology an excellent match for the increased use of high-k dielectrics and shrinking feature size in the semiconductor industry. The presence of a gas in the LVSEM chamber means that the probe characteristics and secondary electron amplification, detection, and signal-to-noise ratio differ significantly from conventional high vacuum tools. In order for low vacuum CD approaches to be viable, …