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Strain Distribution During Growth Of Ge/Si(001) And The Effect Of Surfactant Layers, J. E. Macdonald, J. M. C. Thornton, A. A. Williams, P. Ashu, C. C. Matthai, H. A. Van Der Vegt, E. Vlieg
Strain Distribution During Growth Of Ge/Si(001) And The Effect Of Surfactant Layers, J. E. Macdonald, J. M. C. Thornton, A. A. Williams, P. Ashu, C. C. Matthai, H. A. Van Der Vegt, E. Vlieg
Scanning Microscopy
Grazing incidence X-ray diffraction has been employed to determine directly the distribution of strain in the plane of the interface during deposition of Ge onto Si(001). The corresponding strain distribution has also been deduced for a relaxed island whose atomic structure has been determined by molecular dynamics. The results illustrate the central role of elastic deformation of islands in the initial stage of strain relief. The results are also compared with those for growth with a Sb surfactant layer which suppresses island formation. An investigation of surfactant-like behaviour is also presented for homoepitaxial growth of Ag on Ag(111), where sub-monolayer …
Note On The Number Dependence Of Nonequilibrium Molecular Dynamics Simulations Of The Viscosity Of Structured Molecules, Richard L. Rowley, James F. Ely
Note On The Number Dependence Of Nonequilibrium Molecular Dynamics Simulations Of The Viscosity Of Structured Molecules, Richard L. Rowley, James F. Ely
Faculty Publications
Nonequilibrium molecular dynamics simulations have been performed for a system of 512 four-site models representing n-butane molecules. The results are compared to simulations previously reported for 125 molecules to check a recently reported number dependence in such simulations. A small system size dependence was observed at low shear rates, but the rheological behavior is not affected. Considerably greater certainty is obtained using larger systems.