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Synthesis And Characterization Of Silicon Nitride Film Deposited By Plasma Enhanced Chemical Vapor Deposition From Ditertiary-Butyl Silane, Kei-Turng Shih Dec 1991

Synthesis And Characterization Of Silicon Nitride Film Deposited By Plasma Enhanced Chemical Vapor Deposition From Ditertiary-Butyl Silane, Kei-Turng Shih

Theses

Ditertiary-butyl silane (DTBS) and ammonia have been used to deposit silicon nitride films by plasma enhanced chemical vapor deposition (PECVD) with ammonia. The films were deposited in the temperature range of 150 to 300 °C with 0.15 watts/cm2 plasma power density at 100 KHz. The NH3/DTBS ratio was varied from 1 to 18, the total flow rate was varied between 195 and 570 sccm with total pressure ranging from 0.2 to 0.6 torr.

The deposition rate of these films was found to increase as total pressure or total flow rate increases, but was found to decrease as …


Low Pressure Chemical Vapor Deposition (Lpcvd) Of Silicon Carbide From Diethylsilane, Yi-Tong Shi Aug 1991

Low Pressure Chemical Vapor Deposition (Lpcvd) Of Silicon Carbide From Diethylsilane, Yi-Tong Shi

Theses

The depositions of amorphous and cubic-crystal SiC from a new chemical vapor deposition source, diethylsilane(DES), have been studied. Amorphous SiC thin films and crystalline cubic-SiC materials have been deposited on silicon wafers at temperature lower and higher than 850C, respectively. The activation energy and a reaction mechanism involving the production and subsequent desorption of diethylsilene has been suggested, which explains the observed deposition dependency with the temperature and reactor pressure. A model based on the polymerization of DES is offered and the deposition rate is found to be the result of a large number of simultaneously occuring deposition processes for …


Synthesis And Characterization Of Lpcvd Silicon Carbide Thin Films For X-Ray Lithography, Mahalingam Bhaskaran May 1991

Synthesis And Characterization Of Lpcvd Silicon Carbide Thin Films For X-Ray Lithography, Mahalingam Bhaskaran

Theses

Amorphous silicon carbide thin films were fabricated using low pressure chemical deposition method with a single liquid precursor, di tertiary butyl silane. The films were deposited for a temperature range of 500-850°C and at different pressures ranging from 0.05 to 1 torr. The growth rate of the films deposited at constant pressure of 0.2 torr with a flow rate of 60 sccm, was found to follow an Arrehenius Behavior in the temperature range of 600 - 675°C, yielding an activation energy of 32.5 k cal mol-1 . IR spectroscopic study showed an absorption peak centered at 780 cm-1 …


Adhesion Of Sputtered Copper To Plasma-Treated Polyimide Substrates, Jong-Bong Ma Apr 1991

Adhesion Of Sputtered Copper To Plasma-Treated Polyimide Substrates, Jong-Bong Ma

Theses

We have studied the adhesion of a sputtered copper film (thickness 5000 Angstroms) to flexible polyimide substrates between 1 mil and 5 mil thick. The polyimide types include Kapton (based on the monomers of pyromellitic dianhydride and oxydialine, i.e., PMDA-ODA) and Upilex (based on the bi-phenyl tetracarboxylic dianhydride monomer). (A. S. Wood, 1988) For each of these polyimides, a clear difference in adhesion is observed when the polymer surface has been treated with a simple AC nitrogen glow discharge. We used a tape test to estimate the strength of the adhesion bond. The difference in adhesion only becomes apparent after …


Electron-Bean Biased Reactive Evaporation Of Silicon, Silicon Oxides, And Silicon Nitrides, Jen-Yu Yeh Feb 1991

Electron-Bean Biased Reactive Evaporation Of Silicon, Silicon Oxides, And Silicon Nitrides, Jen-Yu Yeh

Theses

Silicon and silicon related films were deposited onto glass slides and silicon wafers by electron-beam evaporation of silicon in oxygen and nitrogen atmospheres. An ionizer consisting of a heated tungsten wire biased with a negative voltage enhanced the opportunity of reactive deposition. Substrate temperature, chamber pressure, deposition rate, and biasing voltage were the controlled variables. The film reactive indices were measured using spectro-photometry and ellipsometry to examine the effects of these four variables. The refractive index obtained from silicon films is 4.18-4.42 and the refractive indices for silicon oxides range from 1.57 to 3.93. No evidence of silicon nitride formation …


Determination Of The Thermal Properties Of Thin Polymer Films, Duane A. Swanson Jan 1991

Determination Of The Thermal Properties Of Thin Polymer Films, Duane A. Swanson

Theses

The purpose of this investigation was to analyze heat transfer characteristics of cavitated-core polymer films. The effects of thickness and composition on the insulative properties of thin polymer films were studied. Two experimental tests were developed to measure the heat transfer rate through a variety of thin films. One test apparatus was used to study convective and radiative effects while the second was used to study the conductive effects. A finite element model of a frozen food commodity wrapped in an insulative thin film was developed. Transient simulations were performed for the dynamic characterization of thermal wave propagation across the …