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Virginia Commonwealth University
MOLECULAR-BEAM EPITAXY; PHOTOLUMINESCENCE BANDS; ENERGY; PLASMA; GALLIUM
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Green Luminescence In Mg-Doped Gan, Michael A. Reshchikov, Denis Demchenko, J. D. Mcnamara, S. Fernández-Garrido, R. Calarco
Green Luminescence In Mg-Doped Gan, Michael A. Reshchikov, Denis Demchenko, J. D. Mcnamara, S. Fernández-Garrido, R. Calarco
Physics Publications
A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands remain unidentified. One of them is the green luminescence band (GL2) having a maximum at 2.35 eV which was observed previously in undoped GaN grown by molecular-beam epitaxy in Ga-rich conditions. The same PL band was observed in Mg-doped GaN, also grown in very Ga-rich conditions. The unique properties of the GL2 band allowed us to reliably identify it in different samples. The best candidate for the defect which causes the GL2 band is a nitrogen vacancy (VN). We propose that transitions of electrons …