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Influence Of Annealing On The Interface Structure And Strain Relief In Si/Ge Heterostructures On (100) Si, D. J. Lockwood, J. -M. Baribeau, T. E. Jackman, P. Aebi, T. Tyliszczak, A. P. Hitchcock, R. L. Headrick
Influence Of Annealing On The Interface Structure And Strain Relief In Si/Ge Heterostructures On (100) Si, D. J. Lockwood, J. -M. Baribeau, T. E. Jackman, P. Aebi, T. Tyliszczak, A. P. Hitchcock, R. L. Headrick
Scanning Microscopy
Research work on the general problem of the nature and thermal stability of the Si/Ge semiconductor interface is reviewed. We report on our recent studies of the interface structure in [(Si)m(Ge)n]p superlattices and (Ge)n layers buried in Si as revealed by Raman scattering, extended X-ray absorption fine structure, and X-ray techniques. Strain relaxation and interdiffusion in the superlattices caused by annealing have been investigated, and it is found that considerable strain-enhanced intermixing together with partial relaxation of Ge-Ge bonds occurs even for very short anneal times at 700°C. Further annealing leads to diffusion at …
Strain Distribution During Growth Of Ge/Si(001) And The Effect Of Surfactant Layers, J. E. Macdonald, J. M. C. Thornton, A. A. Williams, P. Ashu, C. C. Matthai, H. A. Van Der Vegt, E. Vlieg
Strain Distribution During Growth Of Ge/Si(001) And The Effect Of Surfactant Layers, J. E. Macdonald, J. M. C. Thornton, A. A. Williams, P. Ashu, C. C. Matthai, H. A. Van Der Vegt, E. Vlieg
Scanning Microscopy
Grazing incidence X-ray diffraction has been employed to determine directly the distribution of strain in the plane of the interface during deposition of Ge onto Si(001). The corresponding strain distribution has also been deduced for a relaxed island whose atomic structure has been determined by molecular dynamics. The results illustrate the central role of elastic deformation of islands in the initial stage of strain relief. The results are also compared with those for growth with a Sb surfactant layer which suppresses island formation. An investigation of surfactant-like behaviour is also presented for homoepitaxial growth of Ag on Ag(111), where sub-monolayer …
Strained And Relaxed Semiconducting Silicide Layers Heteroepitaxially Grown On Silicon, J. Chevrier, Le Thanh Vinh, J. Derrien
Strained And Relaxed Semiconducting Silicide Layers Heteroepitaxially Grown On Silicon, J. Chevrier, Le Thanh Vinh, J. Derrien
Scanning Microscopy
The semiconducting silicide ß-FeSi2, which can be grown epitaxially on silicon, is potentially an interesting material for integrated optoelectronic devices. Its semiconducting state stabilised by a solid state Jahn Teller effect is very unusual. Indeed the epitaxial growth of FeSi2 on silicon (111) in a Molecular Beam Epitaxy (MBE) chamber has revealed the existence of a metallic strained FeSi2 phase which is the result of a simultaneous electronic and structural transition. The stability and the relaxation of this strained phase which is specifically due to the epitaxy of FeSi2 on the silicon (111) face …
On The Origin Of Electron-Beam-Induced-Current Contrast Of Extended Defects In Silicon, M. Kittler, W. Seifert
On The Origin Of Electron-Beam-Induced-Current Contrast Of Extended Defects In Silicon, M. Kittler, W. Seifert
Scanning Microscopy
The paper reviews the origin of bright and dark Electron-Beam-Induced Current (EBIC) contrast due to extended defects in silicon, inclusively a brief discussion of contrast modelling. Particular emphasis is put on the role of impurities demonstrated to determine contrast in many cases (extrinsic contrast origin). The understanding of the prevalent contrast type -dark contrast due to enhanced recombination at defects -is well supported by existing phenomenological contrast models which can, therefore, be used as a basis for contrast interpretation. In the context of extrinsic vs. intrinsic contrast origin, the influence of defect dimensionality on contrast is addressed, indicating that grain …
Coverage Dependence Of K Adsorption On Si(100)—2× 1 By Core-Level Photoemission, D. Mark Riffe, G. K. Wertheim, P. H. Citrin, J. E. Rowe
Coverage Dependence Of K Adsorption On Si(100)—2× 1 By Core-Level Photoemission, D. Mark Riffe, G. K. Wertheim, P. H. Citrin, J. E. Rowe
All Physics Faculty Publications
Using core-level photoemission, a coverage-dependent transition in the adsorption of K on Si(100)2×1 is observed. Below ∼0.25 monolayers, a single adsorption is occupied, the asymmetry of the Si-dimer reconstruction is enhanced, and no more than ∼0.05e is transferred from K to Si. Above this coverage, multiple sites are occupied, the dimer configuration becomes more symmetric, and the K overlayer becomes increasingly metallic. These findings resolve a number of conflicting studies of this system.
Diffraction And Imaging Theory Of Inelastically Scattered Electrons - A New Approach, Z. L. Wang, J. Bentley
Diffraction And Imaging Theory Of Inelastically Scattered Electrons - A New Approach, Z. L. Wang, J. Bentley
Scanning Microscopy
A new dynamical theory is developed for describing inelastic electron scattering in thin crystals. Compared to existing theories, the first advantage of this new theory is that the incoherent summation of the diffracted intensities contributed by electrons after exciting vast numbers of degenerate excited states has been evaluated before any numerical calculation. The second advantage is that only the modulus squared of the transition matrix elements are needed in the final computation. This greatly reduces the effort in searching for "phase shifts" in inelastic scattering matrix calculations. By iterative operation of this single-inelastic scattering theory, multiple-inelastic electron scattering of phonons, …