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Surface Chemistry Of Application Specific Pads And Copper Chemical Mechanical Planarization, Sameer Arun Deshpande
Surface Chemistry Of Application Specific Pads And Copper Chemical Mechanical Planarization, Sameer Arun Deshpande
Electronic Theses and Dissertations
Advances in the interconnection technology have played a key role in the continued improvement of the integrated circuit (IC) density, performance and cost. Copper (Cu) metallization, dual damascenes processing and integration of copper with low dielectric constant material are key issues in the IC industries. Chemical mechanical planarization of copper (CuCMP) has emerged as an important process for the manufacturing of ICs. Usually, Cu-CMP process consists of several steps such as the removal of surface layer by mechanical action of the pad and the abrasive particles, the dissolution of the abraded particles in the CMP solution, and the protection of …
Slurry Chemistry Effects On Copper Chemical Mechanical Planarization, Ying Luo
Slurry Chemistry Effects On Copper Chemical Mechanical Planarization, Ying Luo
Electronic Theses and Dissertations
Chemical-mechanical Planarization (CMP) has emerged as one of the fastest-growing processes in the semiconductor manufacturing industry, and it is expected to show equally explosive growth in the future (Braun, 2001). The development of CMP has been fueled by the introduction of copper interconnects in microelectronic devices. Other novel applications of CMP include the fabrications of microelectromechanical systems (MEMS), advanced displays, three dimensional systems, and so on (Evans, 2002). CMP is expected to play a key role in the next-generation micro- and nanofabrication technologies (Singh, et al., 2002). Despite the rapid increase in CMP applications, the fundamental understanding of the CMP …